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BL250N10T PDF预览

BL250N10T

更新时间: 2024-11-28 17:02:03
品牌 Logo 应用领域
银河微电 - BL Galaxy Electrical /
页数 文件大小 规格书
6页 622K
描述
55A, 100V, 2.3W, N Channel, Power MOSFETs

BL250N10T 数据手册

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N-Channel Enhancement Mode MOSFET  
BL250N10T BL250N10TB  
Features  
Advanced shielded-gate technology  
Low gate charge minimize switching loss  
Fast recovery body diode  
HBM: JESD22-A114-B: 1A  
Mechanical Data  
Case: TO-220AB, TO-263  
Molding Compound: UL Flammability Classification Rating 94V-0  
Terminals: Matte tin-plated leads; solderability-per MIL-STD-202,  
Method 208  
TO-220AB  
TO-263  
Ordering Information  
Part Number  
BL250N10T  
Package  
Shipping Quantity  
Marking Code  
250N10T  
TO-220AB  
TO-263  
50 pcs / Tube  
BL250N10TB  
50 pcs / Tube & 800 pcs / Tape & Reel  
250N10TB  
Maximum Ratings (@ TC = 25°C unless otherwise specified)  
Parameter  
Drain-to-Source Voltage  
Symbol  
Value  
Unit  
VDSS  
VGSS  
100  
V
V
Gate-to-Source Voltage  
±20  
Continuous Drain Current (TC = 25°C)  
Continuous Drain Current (TC = 100°C)  
Continuous Drain Current (TA = 25°C)  
Continuous Drain Current (TA = 100°C)  
Pulsed Drain Current (tp = 10μs, TC = 25°C )  
Single Pulse Avalanche Energy *2  
Power Dissipation (TC = 25°C)  
34  
A
22  
A
ID  
9
5.7  
A
A
IDM  
EAS  
PD  
136  
A
51  
mJ  
W
°C  
°C  
60  
Operating Junction Temperature Range  
Storage Temperature Range  
TJ  
-55 ~ +150  
-55 ~ +150  
TSTG  
Thermal Characteristics  
Parameter  
Symbol  
Min.  
Typ.  
Max.  
Unit  
Thermal Resistance Junction-to-Case  
Thermal Resistance Junction-to-Air  
RθJC  
RθJA  
-
-
-
-
2.1  
30  
°C /W  
°C /W  
MTM0733A: December 2023 [2.0]  
www.gmesemi.com  
1

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