Datasheet > BL250N06TD

BL250N06TD

更新时间： 2024-04-09 19:03:04

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
7页	606K
描述
60V, N Channel MOSFETs

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数据手册

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BL250N06TD 数据手册

N-Channel Enhancement Mode MOSFET

BL250N06TI BL250N06TD

Features



Extremely low losses due to very low FOM R_DS(on)× Q_G

High-speed switching

HBM: JESD22-A114-B: 1A

Mechanical Data



Case: TO-251, TO-252

Molding Compound: UL Flammability Classification Rating 94V-0

Terminals: Matte tin-plated leads; solderability-per MIL-STD-202,

Method 208

TO-251

TO-252

Ordering Information

Part Number

BL250N06TI

BL250N06TD

Package

Shipping Quantity

Marking Code

250N06TI

TO-251

TO-252

80 pcs / Tube

80 pcs / Tube & 2500 pcs / Tape & Reel

250N06TD

Maximum Ratings (@ T_A= 25°C unless otherwise specified)

Parameter

Drain-to-Source Voltage

Symbol

Value

Unit

V_DSS

V_GSS

Gate-to-Source Voltage

±20

Continuous Drain Current (T_C= 25°C)

Continuous Drain Current (T_C= 100°C)

Continuous Drain Current (T_A= 25°C) ^*1

Continuous Drain Current (T_A= 100°C) ^*1

Pulsed Drain Current (t_p= 10μs, T_C= 25°C)

Single Pulse Avalanche Energy ^*3

Power Dissipation (T_C= 25°C)

I_D

6.3

I_DM

E_AS

P_D

115

9.5

°C

Operating Junction Temperature Range

Storage Temperature Range

T_J

-55 ~ +150

T_STG

Thermal Characteristics

Parameter

Symbol

Min.

Typ.

Max.

Unit

Thermal Resistance Junction-to-Case

Thermal Resistance Junction-to-Air ^*1

R_θJC

R_θJA

3.7

°C /W

MTM1081A: January 2024 [2.3]

www.gmesemi.com

12 3 4 5 6 7

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