Datasheet > BL250N10TR

BL250N10TR

更新时间： 2024-09-25 17:01:03

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	443K
描述
100V, N Channel MOSFETs

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中文翻译

获取价格

数据手册

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BL250N10TR 数据手册

N-Channel Enhancement Mode MOSFET

BL250N10TR

Features



Advanced shielded-gate technology

Low gate charge minimize switching loss

Fast recovery body diode

HBM: JESD22-A114-B: 1A

Mechanical Data



Case: SOT-223

Molding Compound: UL Flammability Classification Rating 94V-0

Terminals: Matte tin-plated leads; solderability-per MIL-STD-202,

Method 208

SOT-223

Ordering Information

Part Number

Package

SOT-223

Shipping Quantity

Marking Code

BL250N10TR

4000 pcs / Tape & Reel

250N10TR

Maximum Ratings (@ T_C= 25°C unless otherwise specified)

Parameter

Drain-to-Source Voltage

Symbol

Value

Unit

V_DSS

V_GSS

100

Gate-to-Source Voltage

±20

Continuous Drain Current (T_C= 25°C)

Continuous Drain Current (T_A= 25°C) ^*1

Continuous Drain Current (T_A= 100°C) ^*1

Pulsed Drain Current (t_p= 10μs, T_A= 25°C )

Single Pulse Avalanche Energy ^*3

Power Dissipation (T_C= 25°C)

I_D

4.4

I_DM

E_AS

°C

P_D

Power Dissipation (T_A= 25°C) ^*1

Operating Junction Temperature Range

Storage Temperature Range

2.5

T_J

-55 ~ +150

T_STG

Thermal Characteristics

Parameter

Symbol

Min.

Typ.

Max.

Unit

Thermal Resistance Junction-to-Case

Thermal Resistance Junction-to-Air ^*1

R_θJC

R_θJA

°C /W

MTM1534A: January 2024 [2.0]

www.gmesemi.com

12 3 4 5

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