Datasheet > BL250N10

BL250N10

更新时间： 2024-09-25 17:01:23

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	450K
描述
55A, 100V, 142W, N Channel, Power MOSFETs

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BL250N10 数据手册

N-Channel Enhancement Mode MOSFET

BL250N10

Features



Advanced Trench Process Technology

High density cell design for ultra low on-resistance



Mechanical Data



Case: TO-220AB

Molding Compound: UL Flammability Classification Rating 94V-0

Terminals: Matte tin-plated leads; solderability-per MIL-STD-202,

Method 208

TO-220AB

Ordering Information

Part Number

Package

TO-220AB

Shipping Quantity

Marking Code

BL250N10

50 pcs / Tube

250N10

Maximum Ratings (@ T_A= 25°C unless otherwise specified)

Parameter

Drain-to-Source Voltage

Symbol

Value

Unit

V_DSS

V_GSS

100

±20

Gate-to-Source Voltage

Continuous Drain Current (T_C= 25°C)

Continuous Drain Current (T_C= 100°C)

Continuous Drain Current (T_A= 25°C)

Continuous Drain Current (T_A= 70°C)

Pulsed Drain Current ^*1

I_D

7.2

5.7

220

I_DM

Single Pulse Avalanche Energy ^*6

E_AS

Thermal Characteristics

Parameter

Symbol

Value

Unit

Power Dissipation (T_C= 25°C)

142

P_D

Power Dissipation (T_A= 25°C)

Thermal Resistance Junction-to-Case ^{*4, 5}

Thermal Resistance Junction-to-Air ^{*4, 5}

Operating Junction Temperature Range

Storage Temperature Range

R_θJC

R_θJA

T_J

0.88

°C/W

°C

62.5

-55 ~ +150

T_STG

°C

MTM0454A: April 2021

www.gmesemi.com

12 3 4 5

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