Datasheet > BL250N04DF1

BL250N04DF1

更新时间： 2024-11-28 17:01:11

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
6页	647K
描述
40V, N Channel MOSFETs

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中文翻译

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数据手册

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BL250N04DF1 数据手册

N-Channel Enhancement Mode MOSFET

BL250N04DF1

Features



Lower R_DS(on)



Good stability and uniformity

Mechanical Data



Case: DFN2020-6L

Molding Compound: UL Flammability Classification Rating 94V-0

Terminals: Matte tin-plated leads; solderability-per MIL-STD-202,

Method 208

DFN2020-6L

Ordering Information

Part Number

Package

DFN2020-6L

Shipping Quantity

Marking Code

250N04

BL250N04DF1

3000 pcs / Tape & Reel

Maximum Ratings (@ T_C= 25°C unless otherwise specified)

Parameter

Drain-to-Source Voltage

Symbol

V_DSS

Value

Unit

Gate-to-Source Voltage

V_GSS

±20

Continuous Drain Current (T_C= 25°C )

Continuous Drain Current (T_A= 25°C ) ^*1

Continuous Drain Current (T_A= 100°C ) ^*1

Pulsed Drain Current (t_p= 10μs, T_A= 25°C )

Single Pulse Avalanche Energy ^*3

Power Dissipation (T_C= 25°C)

I_D

6.4

I_DM

E_AS

°C

12.5

P_D

Power Dissipation (T_A= 25°C) ^*1

Operating Junction Temperature Range

Storage Temperature Range

T_J

-55 ~ +150

T_STG

Thermal Characteristics

Parameter

Symbol

Min.

Typ.

Max.

Unit

Thermal Resistance Junction-to-Case

Thermal Resistance Junction-to-Air ^*1

R_θJC

R_θJA

°C /W

MTM1537A: August 2023 [2.0]

www.gmesemi.com

12 3 4 5 6

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