Datasheet > BL250N10T-3DL8

BL250N10T-3DL8

更新时间： 2024-11-25 17:01:31

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	867K
描述
22A, 100V, 37W, N Channel, Power MOSFETs

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数据手册

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BL250N10T-3DL8 数据手册

N-Channel Enhancement Mode MOSFET

BL250N10T-3DL8

Features



Low gate charge minimize switching loss



Fast recovery body diode

Mechanical Data



Case: PDFN3×3-8L

Molding Compound: UL Flammability Classification Rating 94V-0

Terminals: Matte tin-plated leads; solderability-per MIL-STD-202,

Method 208

PDFN3×3-8L

Ordering Information

Part Number

Package

PDFN3×3-8L

Shipping Quantity

Marking Code

250N10T

BL250N10T-3DL8

5000 pcs / Tape & Reel

Maximum Ratings (@ T_C= 25°C unless otherwise specified)

Parameter

Drain-to-Source Voltage

Symbol

Value

Unit

V_DSS

V_GSS

I_D

100

±20

Gate-to-Source Voltage

Continuous Drain Current (T_C= 25°C)

Continuous Drain Current (T_C= 100°C)

Pulsed Drain Current (t_p=10us)

Single Pulse Avalanche Energy ^*2

I_D

I_DM

E_AS

104

Thermal Characteristics

Parameter

Symbol

Value

Unit

Power Dissipation (T_C= 25°C)

P_D

R_θJA

R_θJC

T_J

°C /W

°C

Thermal Resistance Junction-to-Air

Thermal Resistance Junction-to-Case

Operating Junction Temperature Range

Storage Temperature Range

3.3

-55 ~ +150

T_STG

°C

MTM0800A: May 2022

www.gmesemi.com

12 3 4 5

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