Datasheet > BFQ29

BFQ29

更新时间： 2024-11-20 22:39:35

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体放大器晶体管
页数	文件大小	规格书
10页	231K
描述
NPN Silicon RF Transistor (For low-noise IF and broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA.)

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BFQ29 数据手册

NPN Silicon RF Transistor

BFQ 29P

● For low-noise IF and broadband amplifiers up to

1 GHz at collector currents from 1 mA to 20 mA.

● CECC-type available: CECC 50002/258.

ESD: Electrostatic discharge sensitive device, observe handling precautions!

Package¹⁾

Type

Marking

Ordering Code

(tape and reel)

Pin Configuration

BFQ 29P

Q62702-F659

SOT-23

Maximum Ratings

Parameter

Symbol

Values

Unit

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

CE0

CB0

EB0

Base current

Total power dissipation, T^S≤ 65 ˚C³⁾

Junction temperature

Ambient temperature range

Storage temperature range

tot

280

150

˚C

– 65 … + 150

stg

Thermal Resistance

Junction - ambient²⁾

th JA

th JS

≤ 385

≤ 305

K/W

Junction - soldering point³⁾

For detailed dimensions see chapter Package Outlines.

Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm.

TS is measured on the collector lead at the soldering point to the pcb.

12 3 4 5 6 7...10

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