Datasheet > BFQ29P

BFQ29P

更新时间： 2024-11-17 22:39:35

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体放大器晶体管
页数	文件大小	规格书
10页	231K
描述
NPN Silicon RF Transistor (For low-noise IF and broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA.)

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中文翻译

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技术参数
数据手册

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BFQ29P 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.58
最大集电极电流 (IC)：	0.03 A	配置：	Single
最小直流电流增益 (hFE)：	50	最高工作温度：	150 °C
极性/信道类型：	NPN	最大功率耗散 (Abs)：	0.28 W
子类别：	Other Transistors	表面贴装：	YES
标称过渡频率 (fT)：	4700 MHz	Base Number Matches：	1

BFQ29P 数据手册

NPN Silicon RF Transistor

BFQ 29P

● For low-noise IF and broadband amplifiers up to

1 GHz at collector currents from 1 mA to 20 mA.

● CECC-type available: CECC 50002/258.

ESD: Electrostatic discharge sensitive device, observe handling precautions!

Package¹⁾

Type

Marking

Ordering Code

(tape and reel)

Pin Configuration

BFQ 29P

Q62702-F659

SOT-23

Maximum Ratings

Parameter

Symbol

Values

Unit

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

CE0

CB0

EB0

Base current

Total power dissipation, T^S≤ 65 ˚C³⁾

Junction temperature

Ambient temperature range

Storage temperature range

tot

280

150

˚C

– 65 … + 150

stg

Thermal Resistance

Junction - ambient²⁾

th JA

th JS

≤ 385

≤ 305

K/W

Junction - soldering point³⁾

For detailed dimensions see chapter Package Outlines.

Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm.

TS is measured on the collector lead at the soldering point to the pcb.

12 3 4 5 6 7...10

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