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BFQ31R PDF预览

BFQ31R

更新时间: 2024-11-21 20:32:19
品牌 Logo 应用领域
美台 - DIODES 光电二极管晶体管
页数 文件大小 规格书
1页 41K
描述
RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN

BFQ31R 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.62
Is Samacsys:N最大集电极电流 (IC):0.1 A
基于收集器的最大容量:1.7 pF集电极-发射极最大电压:15 V
配置:SINGLE最高频带:ULTRA HIGH FREQUENCY BAND
JESD-30 代码:R-PDSO-G3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管元件材料:SILICON
标称过渡频率 (fT):600 MHzBase Number Matches:1

BFQ31R 数据手册

  

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