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BFQ31TC PDF预览

BFQ31TC

更新时间: 2024-09-13 12:59:27
品牌 Logo 应用领域
捷特科 - ZETEX 晶体小信号双极晶体管射频小信号双极晶体管光电二极管局域网
页数 文件大小 规格书
1页 39K
描述
RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN

BFQ31TC 技术参数

生命周期:Transferred包装说明:SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.1
最大集电极电流 (IC):0.1 A基于收集器的最大容量:1.7 pF
集电极-发射极最大电压:15 V配置:SINGLE
最小直流电流增益 (hFE):20最高频带:ULTRA HIGH FREQUENCY BAND
JESD-30 代码:R-PDSO-G3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:NPN
最小功率增益 (Gp):15 dB认证状态:Not Qualified
参考标准:CECC表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):600 MHzVCEsat-Max:0.4 V
Base Number Matches:1

BFQ31TC 数据手册

  
SOT23 NPN SILICON PLANAR  
VHF/UHF TRANSISTOR  
ISSUE 4 – MARCH 2001  
BFQ31A  
PARTMARKING DETAILS  
BFQ31A  
BFQ31AR  
S4  
S5  
E
C
B
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
VALUE  
UNIT  
V
Collector-Base Voltage  
30  
Collector-Emitter Voltage  
Emitter-Base Voltage  
15  
V
3
100  
V
Continuous Collector Current  
Base Current  
mA  
mA  
mW  
°C  
IB  
50  
Power Dissipation at Tamb=25°C  
Operating and Storage Temperature Range  
Ptot  
330  
Tj:Tstg  
-55 to +150  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C).  
amb  
PARAMETER  
SYMBOL  
BFQ31A  
UNIT CONDITIONS.  
MIN.  
30  
MAX.  
Collector-Base  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
V
IC=1.0µA, IE=0  
IC=3mA, IB=0*  
IE=10µA, IC=0  
Breakdown Voltage  
Collector-Emitter  
Breakdown Voltage  
15  
3
V
Emitter-Base  
Breakdown Voltage  
V
Collector Cut-Off  
Current  
0.01  
0.4  
µA  
V
VCB=15V, IE=0  
Collector-Emitter  
Saturation Voltage  
VCE(sat)  
VBE(sat)  
hFE  
IC=10mA, IB=1mA  
IC=10mA, IB=1mA  
IC=3mA, VCE=1V  
Base-Emitter  
Saturation Voltage  
1.0  
V
Static Forward Current  
Transfer Ratio  
100  
600  
Transition  
Frequency  
fT  
MHz  
IC=4mA, VCE=10V  
f=100MHz  
Output Capacitance  
Input Capacitance  
Noise Figure  
Cobo  
Cibo  
N
1.7  
2.0  
6.0  
pF  
pF  
dB  
VCB=10V, f=1MHz  
VCB=0.5V, f=1MHz  
IC=1mA, VCE=6V  
Rs=400, f=60MHz  
*Measured under pulsed conditions.  
Spice parameter data is available upon request for this device  
TBA  

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