Datasheet > BDX54F

BDX54F

更新时间： 2024-12-01 08:52:03

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描述
Complementary Silicon Power Darlington Ttransistors

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BDX54F 数据手册

TIGER ELECTRONIC CO.,LTD

Product specification

Complementary Silicon Power Darlington Ttransistors

BDX53F / BDX54F

DESCRIPTION

The BDX53F are silicon Epitaxial-Base NPN power transistors in

monolithic Darlington configuration mounted in Jedec TO-220 plastic package.

They are intented for use in hammer drivers, audio amplifiers and

other medium power linear and switching applications.

The complementary PNP types are BDX54F respectively.

ABSOLUTE MAXIMUM RATINGS ( Ta = 25 ^OC)

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Value Unit

Symbol

V_CBO

160

V_CEO

V_EBO

I_C

160

8.0

0.2

Base Current

I_B

Total Dissipation at

P_tot

T_j

^oC

150

Max. Operating Junction Temperature

Storage Temperature

TO-220

T_stg

-55~150 ^oC

ELECTRICAL CHARACTERISTICS

( Ta = 25 C)

Parameter

Symbol

Test Conditions

Min.

—

Typ.

—

Max. Unit

Collector Cut-off Current

I_CBO

I_CEO

I_EBO

V_CB=160V, I_E=0

V_CE=80V, I_B=0

V_EB=5.0V, I_C=0

0.2

0.5

2.0

—

Collector Cut-off Current

Emitter Cut-off Current

—

160

500

—

Collector-Emitter Sustaining Voltage

DC Current Gain

V_CEOI_C=50mA, I_B=0

h_FE

V_CE=5V, I_C=2.0A

I_C=2.0A,I_B=10mA

—

V_CE(sat)

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Parallel-diode Forward Voltage

2.0

2.5

V_BE(sat)I_C=2.0A,I_B=10mA

I_F=2A

—

V_F

—

中文翻译

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与BDX54F相关器件

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