Datasheet > BDW47AU

BDW47AU

更新时间： 2024-11-15 03:41:59

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
62页	381K
描述
15A, 100V, PNP, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN

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BDW47AU 数据手册

SEMICONDUCTOR TECHNICAL DATA

. . . designed for general purpose and low speed switching applications.

•

High DC Current Gain – h

= 2500 (typ.) @ I = 5.0 Adc.

Collector Emitter Sustaining Voltage @ 30 mAdc:

*Motorola Preferred Device

= 80 Vdc (min.) — BDW46

= 100 Vdc (min.) — BDW42/BDW47

CEO(sus)

DARLINGTON

15 AMPERE

COMPLEMENTARY

SILICON

POWER TRANSISTORS

80–100 VOLTS

85 WATTS

•

Low Collector Emitter Saturation Voltage

= 2.0 Vdc (max.) @ I = 5.0 Adc

= 3.0 Vdc (max.) @ I = 10.0 Adc

CE(sat)

•

Monolithic Construction with Built–In Base Emitter Shunt resistors

TO–220AB Compact Package

MAXIMUM RATINGS

BDW42

BDW47

Rating

Symbol

BDW46

Unit

Vdc

Adc

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Collector Current — Continuous

Base Current

CEO

100

5.0

0.5

Total Device Dissipation

@ T = 25 C

0.68

Watts

W/ C

Derate above 25 C

CASE 221A–06

TO–220AB

Operating and Storage Junction

Temperature Range

T , T

–55 to +150

stg

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

1.47

C/W

θJC

100

125

150

T , CASE TEMPERATURE (°C)

Figure 1. Power Temperature Derating Curve

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 7

3–212

Motorola Bipolar Power Transistor Device Data

12 3 4 5 6 7...62

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BDW47BD	ONSEMI	获取价格	15A, 100V, PNP, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
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BDW47BS	ONSEMI	获取价格	暂无描述
BDW47BU	ONSEMI	获取价格	15A, 100V, PNP, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
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