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BDW47BG PDF预览

BDW47BG

更新时间： 2024-11-14 13:05:55
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管功率双极晶体管
页数 文件大小 规格书
7页 95K
描述
15A, 100V, PNP, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN

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中文翻译

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BDW47BG 技术参数

是否Rohs认证：符合生命周期：Obsolete
零件包装代码：TO-220AB包装说明：PLASTIC, TO-220AB, 3 PIN
针数：3Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.72
Is Samacsys：N外壳连接：COLLECTOR
最大集电极电流 (IC)：15 A集电极-发射极最大电压：100 V
配置：DARLINGTON WITH BUILT-IN DIODE AND RESISTOR最小直流电流增益 (hFE)：250
JESD-30 代码：R-PSFM-T3元件数量：1
端子数量：3最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：PNP认证状态：Not Qualified
表面贴装：NO端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
标称过渡频率 (fT)：4 MHzBase Number Matches：1

BDW47BG 数据手册

 浏览型号BDW47BG的Datasheet PDF文件第2页浏览型号BDW47BG的Datasheet PDF文件第3页浏览型号BDW47BG的Datasheet PDF文件第4页浏览型号BDW47BG的Datasheet PDF文件第5页浏览型号BDW47BG的Datasheet PDF文件第6页浏览型号BDW47BG的Datasheet PDF文件第7页 
BDW42 − NPN, BDW46,  
BDW47 − PNP  
BDW42 and BDW47 are Preferred Devices  
Darlington Complementary  
Silicon Power Transistors  
This series of plastic, medium−power silicon NPN and PNP  
Darlington transistors are designed for general purpose and low speed  
switching applications.  
http://onsemi.com  
Features  
15 AMP DARLINGTON  
COMPLEMENTARY SILICON  
POWER TRANSISTORS  
80−100 VOLT, 85 WATT  
• High DC Current Gain − h = 2500 (typ) @ I = 5.0 Adc.  
• Collector Emitter Sustaining Voltage @ 30 mAdc:  
FE  
C
V
= 80 Vdc (min) − BDW46  
100 Vdc (min) − BDW42/BDW47  
CEO(sus)  
• Low Collector Emitter Saturation Voltage  
MARKING  
DIAGRAM  
V
= 2.0 Vdc (max) @ I = 5.0 Adc  
C
CE(sat)  
3.0 Vdc (max) @ I = 10.0 Adc  
C
• Monolithic Construction with Built−In Base Emitter Shunt resistors  
• TO−220AB Compact Package  
• Pb−Free Packages Are Available*  
4
TO−220AB  
BDWxx  
CASE 221A−09  
AYWWG  
STYLE 1  
MAXIMUM RATINGS  
1
Rating  
Symbol  
Value  
Unit  
2
3
Collector-Emitter Voltage  
V
CEO  
Vdc  
BDW46  
BDW42, BDW47  
Collector-Base Voltage  
80  
100  
BDWxx = Device Code  
x = 42, 46, or 47  
V
Vdc  
CB  
A
=
=
=
=
Assembly Location  
Year  
BDW46  
BDW42, BDW47  
80  
100  
Y
WW  
G
Work Week  
Pb−Free Package  
Emitter-Base Voltage  
Collector Current  
Base Current  
V
5.0  
15  
Vdc  
Adc  
Adc  
EB  
I
C
I
0.5  
B
ORDERING INFORMATION  
Total Device Dissipation  
P
D
@ T = 25°C  
Derate above 25°C  
85  
0.68  
W
W/°C  
C
Device  
Package  
Shipping  
BDW42  
TO−220AB  
50 Units/Rail  
50 Units/Rail  
Operating and Storage Junction  
Temperature Range  
T , T  
−55 to +150  
°C  
J
stg  
BDW42G  
TO−220AB  
(Pb−Free)  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
BDW46  
TO−220AB  
50 Units/Rail  
50 Units/Rail  
Thermal Resistance,  
Junction−to−Case  
R
1.47  
°C/W  
q
JC  
BDW46G  
TO−220AB  
(Pb−Free)  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
BDW47  
TO−220AB  
50 Units/Rail  
50 Units/Rail  
BDW47G  
TO−220AB  
(Pb−Free)  
Preferred devices are ON Semiconductor recommended  
choices for future use and best overall value  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
© Semiconductor Components Industries, LLC, 2005  
Publication Order Number:  
October, 2005 − Rev. 12  
BDW42/D  
1234567

中文翻译

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BDW47N MOTOROLA

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 		Power Bipolar Transistor, 15A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plas

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