Datasheet > BDV64C

BDV64C

更新时间： 2024-09-25 22:27:27

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描述
PNP SILICON POWER DARLINGTONS

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数据手册

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BDV64C 数据手册

BDV64, BDV64A, BDV64B, BDV64C

PNP SILICON POWER DARLINGTONS

JUNE 1993 - REVISED MARCH 1997

●

Designed for Complementary Use with

BDV65, BDV65A, BDV65B and BDV65C

SOT-93 PACKAGE

(TOP VIEW)

●

125 W at 25°C Case Temperature

12 A Continuous Collector Current

Minimum h of 1000 at 4 V, 5 A

Pin 2 is in electrical contact with the mounting base.

MDTRAA

absolute maximum ratings at 25°C case temperature (unless otherwise noted)

RATING

SYMBOL

VALUE

UNIT

BDV64

-60

-80

BDV64A

BDV64B

BDV64C

BDV64

Collector-base voltage (I_E= 0)

Collector-emitter voltage (I_B= 0)

V_CBO

-100

-120

-60

BDV64A

BDV64B

BDV64C

-80

V_CEO

-100

-120

-5

Emitter-base voltage

V_EBO

I_C

I_CM

I_B

Continuous collector current

Peak collector current (see Note 1)

Continuous base current

-12

-15

-0.5

Continuous device dissipation at (or below) 25°C case temperature (see Note 2)

Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)

Operating junction temperature range

P_tot

T_j

125

°C

3.5

-65 to +150

260

Storage temperature range

T_stg

T_L

Lead temperature 3.2 mm from case for 10 seconds

NOTES: 1. This value applies for t_p£ 0.1 ms, duty cycle £ 10%

2. Derate linearly to 150°C case temperature at the rate of 0.56 W/°C.

3. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C.

P R O D U C T

I N F O R M A T I O N

Information is current as of publication date. Products conform to specifications in accordance

with the terms of Power Innovations standard warranty. Production processing does not

necessarily include testing of all parameters.

12 3 4 5 6

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