5秒后页面跳转
BD801L PDF预览

BD801L

更新时间: 2024-11-07 13:05:55
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体晶体管
页数 文件大小 规格书
4页 97K
描述
7A, 100V, NPN, Si, POWER TRANSISTOR, TO-220AB

BD801L 技术参数

生命周期:Obsolete包装说明:FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.75Is Samacsys:N
外壳连接:COLLECTOR最大集电极电流 (IC):7 A
集电极-发射极最大电压:100 V配置:SINGLE
最小直流电流增益 (hFE):15JEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:NPN功耗环境最大值:65 W
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):3 MHzBase Number Matches:1

BD801L 数据手册

 浏览型号BD801L的Datasheet PDF文件第2页浏览型号BD801L的Datasheet PDF文件第3页浏览型号BD801L的Datasheet PDF文件第4页 
Order this document  
by BD801/D  
SEMICONDUCTOR TECHNICAL DATA  
8 AMPERE  
POWER TRANSISTORS  
NPN SILICON  
. . . designed for use up to 30 Watt audio amplifiers utilizing complementary or quasi  
complementary circuits.  
100 VOLTS  
65 WATTS  
DC Current Gain — h = 40 (Min) @ I = 1.0 Adc  
FE C  
BD801 is complementary with BD 798, 800, 802  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
100  
100  
5.0  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Adc  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
Collector Current  
V
CEO  
V
CBO  
V
EBO  
I
C
8.0  
Base Current  
I
B
3.0  
Total Device Dissipation T = 25 C  
C
Derate above 25 C  
P
D
65  
522  
Watts  
mW/ C  
Operating and Storage Junction  
Temperature Range  
T , T  
55 to +150  
C
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
CASE 221A–06  
TO–220AB  
Symbol  
Max  
Unit  
Thermal Resistance, Junction to Case  
θ
1.92  
C/W  
JC  
ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted)  
C
Characteristic  
Symbol  
Min  
Max  
Unit  
Collector–Emitter Sustaining Voltage*  
BV  
100  
Vdc  
CEO  
(I = 0.1 Adc, I = 0)  
C
C
B
B
(I = 0.05 Adc, I = 0)  
Collector Cutoff Current  
(V = 100 Vdc, I = 0)  
I
0.1  
mAdc  
mAdc  
CBO  
CB  
Emitter Cutoff Current  
(V = 5.0 Vdc, I = 0)  
E
I
1.0  
EBO  
BE  
DC Current Gain  
C
h
FE  
(I = 1.0 A, V  
(I = 3.0 A, V  
C
= 2.0 V)  
= 2.0 V)  
30  
15  
C
CE  
CE  
Collector–Emitter Saturation Voltage*  
(I = 3.0 Adc, I = 0.3 Adc)  
V
1.0  
1.6  
Vdc  
Vdc  
MHz  
CE(sat)  
C
B
Base–Emitter On Voltage*  
(I = 3.0 Adc, V = 2.0 Vdc)  
V
BE(on)  
C
CE  
Current–Gain Bandwidth Product  
f
T
3.0  
(I = 0.25 Adc, V  
C
= 10 Vdc,  
CE  
f = 1.0 MHz)  
* Pulse Test: Pulse Width  
300 µs. Duty Cycle  
2.0%.  
REV 7  
Motorola, Inc. 1995

与BD801L相关器件

型号 品牌 获取价格 描述 数据表
BD801N MOTOROLA

获取价格

Power Bipolar Transistor, 7A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
BD801S MOTOROLA

获取价格

Power Bipolar Transistor, 7A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
BD801T MOTOROLA

获取价格

Power Bipolar Transistor, 7A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
BD801U MOTOROLA

获取价格

7 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-220AB
BD801U2 MOTOROLA

获取价格

7A, 100V, NPN, Si, POWER TRANSISTOR, TO-220AB
BD801UA MOTOROLA

获取价格

Power Bipolar Transistor, 7A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
BD801W MOTOROLA

获取价格

Power Bipolar Transistor, 7A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
BD801WD MOTOROLA

获取价格

7A, 100V, NPN, Si, POWER TRANSISTOR, TO-220AB
BD802 ISC

获取价格

isc Silicon PNP Power Transistor
BD802 MOTOROLA

获取价格

Plastic High Power Silicon PNP Transistor