Datasheet > BD802/D

BD802/D

更新时间： 2024-11-03 23:35:07

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
4页	45K
描述
Plastic High Power Silicon PNP Transistor

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BD802/D 数据手册

ON Semiconductort

BD802

Plastic High Power Silicon

PNP Transistor

8 AMPERE

POWER TRANSISTORS

PNP SILICON

. . . designed for use up to 30 Watt audio amplifiers utilizing

complementary or quasi complementary circuits.

100 VOLTS

65 WATTS

• DC Current Gain —

= 40 (Min) @ I = 1.0 Adc

• BD802 is complementary with BD 795, 797, 799, 801

MAXIMUM RATINGS

Rating

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Collector Current

Symbol

Value

100

5.0

Unit

Vdc

Adc

CEO

CBO

EBO

8.0

Base Current

3.0

Total Device Dissipation T = 25_C

522

Watts

mW/_C

Derate above 25_C

Operating and Storage Junction

Temperature Range

T , T

–55 to +150

stg

THERMAL CHARACTERISTICS

Characteristic

CASE 221A–09

TO–220AB

Symbol

Max

Unit

Thermal Resistance, Junction to Case

1.92

_C/W

ELECTRICAL CHARACTERISTICS (T = 25_C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

Collector–Emitter Sustaining Voltage*

100

—

Vdc

CEO

(I = 0.05 Adc, I = 0)

Collector Cutoff Current

(V = 100 Vdc, I = 0)

—

0.1

1.0

mAdc

CBO

Emitter Cutoff Current

EBO

(V = 5.0 Vdc, I = 0)

DC Current Gain

(I = 1.0 A, V = 2.0 V)

—

(I = 3.0 A, V = 2.0 V)

Collector–Emitter Saturation Voltage*

(I = 3.0 Adc, I = 0.3 Adc)

—

1.0

1.6

—

Vdc

MHz

CE(sat)

Base–Emitter On Voltage*

(I = 3.0 Adc, V = 2.0 Vdc)

BE(on)

Current–Gain — Bandwidth Product

3.0

(I = 0.25 Adc, V = 10 Vdc,

f = MHz)

*Pulse Test: Pulse Width x 300 µs, Duty Cycle x 2.0.

Semiconductor Components Industries, LLC, 2001

Publication Order Number:

March, 2001 – Rev. 9

BD802/D

12 3 4

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BD80216	MOTOROLA	获取价格	Power Bipolar Transistor, 7A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast
BD80216A	MOTOROLA	获取价格	7A, 100V, PNP, Si, POWER TRANSISTOR, TO-220AB
BD802A	MOTOROLA	获取价格	Power Bipolar Transistor, 7A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast
BD802AF	MOTOROLA	获取价格	Power Bipolar Transistor, 7A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast
BD802AF	ONSEMI	获取价格	8A, 100V, PNP, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
BD802AJ	MOTOROLA	获取价格	Power Bipolar Transistor, 7A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast
BD802AJ	ONSEMI	获取价格	8A, 100V, PNP, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
BD802AK	ONSEMI	获取价格	8A, 100V, PNP, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
BD802AN	ONSEMI	获取价格	TRANSISTOR 8 A, 100 V, PNP, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN, BIP General Pu
BD802AS	ONSEMI	获取价格	8A, 100V, PNP, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN