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BD802BU PDF预览

BD802BU

更新时间: 2024-12-02 03:14:55
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
59页 341K
描述
TRANSISTOR 8 A, 100 V, PNP, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN, BIP General Purpose Power

BD802BU 数据手册

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SEMICONDUCTOR TECHNICAL DATA  
8 AMPERE  
POWER TRANSISTORS  
PNP SILICON  
. . . designed for use up to 30 Watt audio amplifiers utilizing complementary or quasi  
complementary circuits.  
100 VOLTS  
65 WATTS  
DC Current Gain — h = 40 (Min) @ I = 1.0 Adc  
FE C  
BD802 is complementary with BD 795, 797, 799, 801  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
100  
100  
5.0  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Adc  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
Collector Current  
V
CEO  
V
CBO  
V
EBO  
I
C
8.0  
Base Current  
I
B
3.0  
Total Device Dissipation T = 25 C  
C
Derate above 25 C  
P
D
65  
522  
Watts  
mW/ C  
Operating and Storage Junction  
Temperature Range  
T , T  
55 to +150  
C
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
CASE 221A–06  
TO–220AB  
Symbol  
Max  
Unit  
Thermal Resistance, Junction to Case  
θ
1.92  
C/W  
JC  
ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted)  
C
Characteristic  
Symbol  
Min  
Max  
Unit  
Collector–Emitter Sustaining Voltage*  
BV  
100  
Vdc  
CEO  
(I = 0.05 Adc, I = 0)  
C
B
Collector Cutoff Current  
(V = 100 Vdc, I = 0)  
I
0.1  
1.0  
mAdc  
mAdc  
CBO  
CB  
Emitter Cutoff Current  
(V = 5.0 Vdc, I = 0)  
E
I
EBO  
BE  
C
DC Current Gain  
(I = 1.0 A, V  
(I = 3.0 A, V  
C
h
FE  
= 2.0 V)  
CE  
= 2.0 V)  
CE  
30  
15  
C
Collector–Emitter Saturation Voltage*  
(I = 3.0 Adc, I = 0.3 Adc)  
V
1.0  
1.6  
Vdc  
Vdc  
MHz  
CE(sat)  
C
B
Base–Emitter On Voltage*  
(I = 3.0 Adc, V = 2.0 Vdc)  
V
BE(on)  
C
CE  
Current–Gain — Bandwidth Product  
f
T
3.0  
(I = 0.25 Adc, V  
C
= 10 Vdc,  
CE  
f = MHz)  
* Pulse Test: Pulse Width  
300 µs, Duty Cycle  
2.0.  
REV 7  
3–204  
Motorola Bipolar Power Transistor Device Data  

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