BD802

更新时间： 2024-11-03 22:27:27

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		晶体晶体管
页数	文件大小	规格书
4页	97K
描述
Plastic High Power Silicon PNP Transistor

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BD802 数据手册

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SEMICONDUCTOR TECHNICAL DATA

8 AMPERE

POWER TRANSISTORS

PNP SILICON

. . . designed for use up to 30 Watt audio amplifiers utilizing complementary or quasi

complementary circuits.

100 VOLTS

65 WATTS

•

DC Current Gain — h = 40 (Min) @ I = 1.0 Adc

FE C

BD802 is complementary with BD 795, 797, 799, 801

MAXIMUM RATINGS

Rating

Symbol

Value

100

5.0

Unit

Vdc

Adc

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Collector Current

CEO

CBO

EBO

8.0

Base Current

3.0

Total Device Dissipation T = 25 C

Derate above 25 C

522

Watts

mW/ C

Operating and Storage Junction

Temperature Range

T , T

–55 to +150

stg

THERMAL CHARACTERISTICS

Characteristic

CASE 221A–06

TO–220AB

Symbol

Max

Unit

Thermal Resistance, Junction to Case

1.92

C/W

ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

Collector–Emitter Sustaining Voltage*

100

—

Vdc

CEO

(I = 0.05 Adc, I = 0)

Collector Cutoff Current

(V = 100 Vdc, I = 0)

—

0.1

1.0

mAdc

CBO

Emitter Cutoff Current

(V = 5.0 Vdc, I = 0)

EBO

DC Current Gain

(I = 1.0 A, V

(I = 3.0 A, V

C CE

= 2.0 V)

—

Collector–Emitter Saturation Voltage*

(I = 3.0 Adc, I = 0.3 Adc)

—

1.0

1.6

—

Vdc

MHz

CE(sat)

Base–Emitter On Voltage*

(I = 3.0 Adc, V = 2.0 Vdc)

BE(on)

Current–Gain — Bandwidth Product

3.0

(I = 0.25 Adc, V

= 10 Vdc,

f = MHz)

* Pulse Test: Pulse Width

300 µs, Duty Cycle

2.0.

REV 7

M^Mo^oto^tor^ro^ol^laa^{, I}B^ncip^{. 1}o⁹la⁹⁵r Power Transistor Device Data

12 3 4

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与BD802相关器件

型号	品牌	获取价格	描述	数据表
BD802/D	ETC	获取价格	Plastic High Power Silicon PNP Transistor
BD80216	MOTOROLA	获取价格	Power Bipolar Transistor, 7A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast
BD80216A	MOTOROLA	获取价格	7A, 100V, PNP, Si, POWER TRANSISTOR, TO-220AB
BD802A	MOTOROLA	获取价格	Power Bipolar Transistor, 7A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast
BD802AF	MOTOROLA	获取价格	Power Bipolar Transistor, 7A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast
BD802AF	ONSEMI	获取价格	8A, 100V, PNP, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
BD802AJ	MOTOROLA	获取价格	Power Bipolar Transistor, 7A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast
BD802AJ	ONSEMI	获取价格	8A, 100V, PNP, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
BD802AK	ONSEMI	获取价格	8A, 100V, PNP, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
BD802AN	ONSEMI	获取价格	TRANSISTOR 8 A, 100 V, PNP, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN, BIP General Pu