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BD678A PDF预览

BD678A

更新时间: 2024-01-19 16:35:41
品牌 Logo 应用领域
COMSET 晶体晶体管局域网
页数 文件大小 规格书
3页 76K
描述
SILICON DARLINGTON POWER TRANSISTORS

BD678A 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SIP
包装说明:PLASTIC PACKAGE-3针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.18
最大集电极电流 (IC):4 A集电极-发射极最大电压:60 V
配置:DARLINGTON最小直流电流增益 (hFE):750
JEDEC-95代码:TO-126JESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):260极性/信道类型:PNP
认证状态:Not Qualified表面贴装:NO
端子面层:MATTE TIN (315)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:10
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):1 MHzBase Number Matches:1

BD678A 数据手册

 浏览型号BD678A的Datasheet PDF文件第2页浏览型号BD678A的Datasheet PDF文件第3页 
PNP BD676/A - BD678/A - BD680/A - BD682/A  
SILICON DARLINGTON POWER TRANSISTORS  
The BD676/A-BD678/A-BD680/A-BD682/A are PNP transistors mounted in Jedec TO-126  
plastic package.  
They are eptaxial-base transistors in monolithic Darlington circuit for audio and video  
applications.  
NPN complements are BD675/A-BD677/A-BD679/A-BD681/A  
Compliance to RoHS.  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
-VCEO  
Ratings  
Value  
Unit  
BD676/A  
BD678/A  
BD680/A  
BD682/A  
BD676/A  
BD678/A  
BD680/A  
BD682/A  
45  
60  
80  
100  
45  
60  
80  
100  
Collector-Emitter Voltage  
Collector-Base Voltage  
V
-VCBO  
V
-VEBO  
-IC  
Emitter-Base Voltage  
Collector Current  
5
4
6
0.1  
40  
V
A
-IC  
-ICM  
-IBM  
-IB  
PT  
TJ  
TStg  
Base current (peak value)  
Total power Dissipation  
Junction Temperature  
Storage Temperature  
A
@ Tmb = 25°C  
W
°C  
°C  
150  
-65 to +150  
THERMAL CHARACTERISTICS  
Symbol  
Ratings  
Value  
Unit  
RthJ-mb  
RthJ-a  
Thermal Resistance, Junction to mouting base  
Thermal Resistance, Junction to ambient in free air  
3.12  
100  
K/W  
K/W  
COMSET SEMICONDUCTORS  
1

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