Datasheet > BD139T

BD139T

更新时间： 2024-11-02 06:41:51

品牌	Logo	应用领域
商升特 - SEMTECH		晶体晶体管
页数	文件大小	规格书
2页	217K
描述
NPN Silicon Epitaxial Power Transistor

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BD139T 数据手册

BD135T / BD137T / BD139T

NPN SILICON EPITAXIAL POWER

TRANSISTOR

These devices are designed as Audio Amplifier

and Drivers Utilizing.

•

TO-126 Plastic Package

Absolute Maximum Ratings (T_a=25 C)

Value

Parameter

Symbol

Unit

BD135T BD137T BD139T

Collector Emitter Voltage

Collector Emitter Voltage ( R_BE= 1 KΩ)

Collector Base Voltage

V_CEO

V_CER

V_CBO

V_EBO

100

Emitter Base Voltage

Collector Current - Continuous

Collector Current - Peak ¹⁾

I_C

I_CM

1.5

Base Current - Continuous

I_B

0.5

Total Power Dissipation @ T_A=25 C

Derate above 25 C

1.25

mW/ C

P_D

Total Power Dissipation @ T_C=25 C

Derate above 25 C

12.5

100

mW/ C

P_D

Total Power Dissipation @ T_C=70 C

P_D

-55 to +150

100

Operating and Storage Junction Temperature Range

Thermal Resistance, Junction to Ambient

Thermal Resistance, Junction to Case

T_J, T_s

R_θ

C/W

R_θ

C/W

SEMTECH ELECTRONICS LTD.

(Subsidiary of Sino-Tech International Holdings Limited, a company

listed on the Hong Kong Stock Exchange, Stock Code: 724)

Dated : 22/03/2006

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