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BD140 PDF预览

BD140

更新时间: 2024-11-01 22:39:31
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体晶体管
页数 文件大小 规格书
4页 107K
描述
Plastic Medium Power Silicon PNP Transistor

BD140 数据手册

 浏览型号BD140的Datasheet PDF文件第2页浏览型号BD140的Datasheet PDF文件第3页浏览型号BD140的Datasheet PDF文件第4页 
Order this document  
by BD136/D  
SEMICONDUCTOR TECHNICAL DATA  
. . . designed for use as audio amplifiers and drivers utilizing complementary or quasi  
complementary circuits.  
DC Current Gain — h = 40 (Min) @ I = 0.15 Adc  
FE C  
BD 136, 138, 140 are complementary with BD 135, 137, 139  
1.5 AMPERE  
POWER TRANSISTORS  
PNP SILICON  
45, 60, 80 VOLTS  
10 WATTS  
CASE 77–08  
TO–225AA TYPE  
MAXIMUM RATINGS  
Rating  
Symbol  
Type  
Value  
Unit  
Collector–Emitter Voltage  
V
V
V
BD 136  
BD 138  
BD 140  
45  
60  
80  
Vdc  
CEO  
CBO  
EBO  
Collector–Base Voltage  
BD 136  
BD 138  
BD 140  
45  
60  
100  
Vdc  
Emitter–Base Voltage  
Collector Current  
Base Current  
5
Vdc  
Adc  
Adc  
I
C
1.5  
0.5  
I
B
Total Device Dissipation@ T = 25 C  
A
Derate above 25 C  
P
D
1.25  
10  
Watts  
mW/ C  
Total Device Dissipation @ T = 25 C  
C
Derate above 25 C  
P
D
12.5  
100  
Watt  
mW/ C  
Operating and Storage Junction  
Temperarture Range  
T , T  
J stg  
55 to +150  
C
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
10  
Unit  
C/W  
C/W  
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient  
θ
θ
JC  
JA  
100  
REV 7  
Motorola, Inc. 1995

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