是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
Reach Compliance Code: | compliant | 风险等级: | 5.43 |
最大集电极电流 (IC): | 1.5 A | 集电极-发射极最大电压: | 80 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 63 |
JEDEC-95代码: | TO-126 | JESD-30 代码: | R-PSFM-T3 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | PNP | 认证状态: | Not Qualified |
表面贴装: | NO | 端子面层: | TIN LEAD |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
BD140-10 | CDIL |
功能相似 |
Power Bipolar Transistor, 1.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plasti |
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BD140-10 | NXP |
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PNP power transistors | |
BD140-10 | MOTOROLA |
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Plastic Medium Power Silicon PNP Transistor | |
BD140-10 | ONSEMI |
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POWER TRANSISTORS PNP SILICON | |
BD140-10 | INFINEON |
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PNP SILICON TRANSISTORS | |
BD140-10 | STMICROELECTRONICS |
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Complementary low voltage transistor | |
BD140-10 | CDIL |
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Power Bipolar Transistor, 1.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plasti | |
BD140-10 | CENTRAL |
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Power Bipolar Transistor, 1.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plasti | |
BD140-10 | UTC |
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BD140-10-BP | MCC |
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Power Bipolar Transistor, 1.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plasti | |
BD140-10LEADFREE | CENTRAL |
获取价格 |
Power Bipolar Transistor, 1.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plasti |