5秒后页面跳转
BD140-10 PDF预览

BD140-10

更新时间: 2024-11-02 20:34:39
品牌 Logo 应用领域
CENTRAL /
页数 文件大小 规格书
2页 340K
描述
Power Bipolar Transistor, 1.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin, TO-126, 3 PIN

BD140-10 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:SIP
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.29.00.75风险等级:5.13
Is Samacsys:N外壳连接:COLLECTOR
最大集电极电流 (IC):1.5 A集电极-发射极最大电压:80 V
配置:SINGLE最小直流电流增益 (hFE):63
JEDEC-95代码:TO-126JESD-30 代码:R-PSFM-T3
JESD-609代码:e0元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP最大功率耗散 (Abs):12.5 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):160 MHz
Base Number Matches:1

BD140-10 数据手册

 浏览型号BD140-10的Datasheet PDF文件第2页 
BD136  
BD138  
BD140  
www.centralsemi.com  
DESCRIPTION:  
SILICON  
The CENTRAL SEMICONDUCTOR BD136, BD138,  
and BD140 are silicon PNP epitaxial planar transistors  
designed for audio amplifier and switching applications.  
PNP TRANSISTORS  
MARKING: FULL PART NUMBER  
TO-126 CASE  
MAXIMUM RATINGS: (T =25°C unless otherwise noted)  
C
SYMBOL BD136  
BD138  
BD140  
UNITS  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Continuous Collector Current  
Peak Collector Current  
Continuous Base Current  
Peak Base Current  
V
V
V
45  
45  
60  
60  
5.0  
1.5  
2.0  
0.5  
1.0  
8.0  
100  
80  
V
V
V
A
A
A
A
W
W
CBO  
CEO  
EBO  
I
C
I
CM  
I
B
I
BM  
Power Dissipation (T <70°C)  
P
P
mb  
D
D
Power Dissipation (T =25°C)  
A
1.25  
-65 to +150  
10  
Operating and Storage Junction Temperature  
Thermal Resistance  
T , T  
°C  
°C/W  
°C/W  
J
stg  
Jmb  
JA  
Θ
Thermal Resistance  
Θ
100  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
C
SYMBOL  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNITS  
I
I
I
V
V
V
=30V  
=30V (T =125°C)  
=5.0V  
100  
10  
100  
nA  
CBO  
CBO  
EBO  
CEO  
CEO  
CEO  
CE(SAT)  
BE(ON)  
FE  
CB  
CB  
EB  
μA  
nA  
V
V
V
C
BV  
BV  
BV  
V
V
h
h
h
I =30mA (BD136)  
45  
60  
80  
C
I =30mA (BD138)  
C
I =30mA (BD140)  
C
I =500mA, I =50mA  
0.5  
1.0  
V
V
C
B
C
C
C
C
C
V
=2.0V, I =500mA  
=2.0V, I =5.0mA  
=2.0V, I =150mA  
=2.0V, I =500mA  
CE  
CE  
CE  
CE  
CE  
V
V
V
V
40  
63  
25  
250  
FE  
FE  
f
=5.0V, I =50mA, f=100MHz  
160  
MHz  
T
BD136-10  
BD138-10  
BD140-10  
BD136-16  
BD138-16  
BD140-16  
SYMBOL  
TEST CONDITIONS  
=2.0V, I =150mA  
MIN  
63  
MAX  
160  
MIN  
100  
MAX  
250  
h
V
FE  
CE  
C
R3 (13-March 2014)  

与BD140-10相关器件

型号 品牌 获取价格 描述 数据表
BD140-10-BP MCC

获取价格

Power Bipolar Transistor, 1.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plasti
BD140-10LEADFREE CENTRAL

获取价格

Power Bipolar Transistor, 1.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plasti
BD14010S FAIRCHILD

获取价格

Power Bipolar Transistor, 1.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plasti
BD14010S ONSEMI

获取价格

1.5 A, 80 V PNP Power Bipolar Junction Transistor
BD14010STU ONSEMI

获取价格

1.5 A, 80 V PNP Power Bipolar Junction Transistor
BD14010STU FAIRCHILD

获取价格

PNP Epitaxial Silicon Transistor, TO-126 (SOT32) UNIFIED DRAWING (TSTU, TSSTU, STANDARD),
BD14016 FAIRCHILD

获取价格

Medium Power Linear and Switching Applications
BD140-16 NXP

获取价格

PNP power transistors
BD140-16 STMICROELECTRONICS

获取价格

Complementary low voltage transistor
BD140-16 UTC

获取价格

暂无描述