Datasheet > BD139

BD139

更新时间： 2024-11-01 22:48:19

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管
页数	文件大小	规格书
4页	104K
描述
POWER TRANSISTORS NPN SILICON

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数据手册
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BD139 数据手册

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by BD135/D

SEMICONDUCTOR TECHNICAL DATA

. . . designed for use as audio amplifiers and drivers utilizing complementary or quasi

complementary circuits.

1.5 AMPERE

POWER TRANSISTORS

NPN SILICON

•

DC Current Gain — h = 40 (Min) @ I = 0.15 Adc

FE C

BD 135, 137, 139 are complementary with BD 136, 138, 140

45, 60, 80 VOLTS

10 WATTS

CASE 77–08

TO–225AA TYPE

MAXIMUM RATINGS

Rating

Symbol

Type

Value

Unit

Collector–Emitter Voltage

BD 135

BD 137

BD 139

Vdc

CEO

CBO

EBO

Collector–Base Voltage

BD 135

BD 137

BD 139

100

Vdc

Emitter–Base Voltage

Collector Current

Base Current

Vdc

Adc

1.5

0.5

Total Device Dissipation @ T = 25 C

Derate above 25 C

1.25

Watts

mW/ C

Total Device Dissipation @ T = 25 C

Derate above 25 C

12.5

100

Watt

mW/ C

Operating and Storage Junction

Temperature Range

T , T

J stg

–55 to +150

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

C/W

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

100

REV 7

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12 3 4

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BD139 替代型号

型号	品牌	替代类型	描述	数据表
BD139G	ONSEMI	类似代替	Plastic Medium Power Silicon NPN Transistor
BD139	STMICROELECTRONICS	类似代替	NPN SILICON TRANSISTORS

与BD139相关器件

型号	品牌	获取价格	描述	数据表
BD139_09	UTC	获取价格	NPN POWER TRANSISTORS
BD13910	FAIRCHILD	获取价格	暂无描述
BD139-10	STMICROELECTRONICS	获取价格	Complementary low voltage transistor
BD139-10	INFINEON	获取价格	NPN SILICON TRANSISTORS
BD139-10	NXP	获取价格	NPN power transistors
BD139-10	COMSET	获取价格	Transistor
BD139-10	CENTRAL	获取价格	80V,1.5A,1.25W Through-Hole Transistor-Bipolar Power (>1A) NPN General Purpose Amplifier/S
BD13910S	FAIRCHILD	获取价格	NPN Epitaxial Silicon Transistor
BD13910S	ONSEMI	获取价格	1.5 A, 80 V NPN Power Bipolar Junction Transistor
BD13910STU	FAIRCHILD	获取价格	NPN Epitaxial Silicon Transistor