Datasheet > BD1396STU

BD1396STU

更新时间： 2024-11-03 11:11:27

品牌	Logo	应用领域
安森美 - ONSEMI		局域网开关晶体管
页数	文件大小	规格书
6页	255K
描述
1.5 A, 80 V NPN Power Bipolar Junction Transistor

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BD1396STU 技术参数

是否无铅：	不含铅	生命周期：	End Of Life
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8541.29.00.95	Factory Lead Time：	1 week
风险等级：	5.75	最大集电极电流 (IC)：	1.5 A
集电极-发射极最大电压：	80 V	配置：	SINGLE
最小直流电流增益 (hFE)：	40	JEDEC-95代码：	TO-126
JESD-30 代码：	R-PSFM-T3	JESD-609代码：	e3
元件数量：	1	端子数量：	3
最高工作温度：	150 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	FLANGE MOUNT
峰值回流温度（摄氏度）：	NOT SPECIFIED	极性/信道类型：	NPN
最大功率耗散 (Abs)：	13 W	认证状态：	Not Qualified
子类别：	Other Transistors	表面贴装：	NO
端子面层：	Tin (Sn)	端子形式：	THROUGH-HOLE
端子位置：	SINGLE	处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
标称过渡频率 (fT)：	250 MHz	Base Number Matches：	1

BD1396STU 数据手册

ON Semiconductor

Is Now

To learn more about onsemi™, please visit our website at

www.onsemi.com

onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or

subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi

product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without

notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,

or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all

liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,

regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/

or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application

by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized

for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for

implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,

subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative

Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.

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BD1396STU 替代型号

型号	品牌	替代类型	描述	数据表
BD13916STU	ONSEMI	类似代替	1.5 A, 80 V NPN Power Bipolar Junction Transistor
BD139G	ONSEMI	类似代替	Plastic Medium Power Silicon NPN Transistor

与BD1396STU相关器件

型号	品牌	获取价格	描述	数据表
BD139G	ONSEMI	获取价格	Plastic Medium Power Silicon NPN Transistor
BD139G-10-T60-K	UTC	获取价格	Power Bipolar Transistor, 1.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plasti
BD139G-10-T6S-K	UTC	获取价格	Power Bipolar Transistor,
BD139G-10-TM3-T	UTC	获取价格	Power Bipolar Transistor, 1.5A I(C), NPN,
BD139G-16-T60-K	UTC	获取价格	Power Bipolar Transistor, 1.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plasti
BD139G-16-T6S-K	UTC	获取价格	Power Bipolar Transistor,
BD139G-16-TM3-T	UTC	获取价格	Power Bipolar Transistor, 1.5A I(C), NPN,
BD139G-T60-K	UTC	获取价格	NPN POWER TRANSISTORS
BD139G-TM3-T	UTC	获取价格	NPN POWER TRANSISTORS
BD139L-10-T60-K	UTC	获取价格	Power Bipolar Transistor, 1.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plasti

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