Datasheet > BD139-10

BD139-10

更新时间： 2024-11-02 20:22:15

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COMSET		/
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3页	68K
描述
Transistor

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中文翻译

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技术参数
数据手册

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BD139-10 技术参数

是否Rohs认证：	符合	生命周期：	Contact Manufacturer
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.59	最大集电极电流 (IC)：	1.5 A
配置：	Single	最小直流电流增益 (hFE)：	63
最高工作温度：	150 °C	极性/信道类型：	NPN
最大功率耗散 (Abs)：	8 W	子类别：	Other Transistors
表面贴装：	NO	Base Number Matches：	1

BD139-10 数据手册

NPN BD135 – BD137 – BD139

SILICON PLANAR EPITAXIAL POWER TRANSISTORS.

The BD135-BD137-BD139 are NPN Transistors

They are recommended for driver stages in hi-fi amplifiers and television circuits.

They are mounted in Jedec TO-126 plastic package.

PNP complements are BD136-BD138-BD140.

Compliance to RoHS

ABSOLUTE MAXIMUM RATINGS

Symbol

Ratings

Value

Unit

BD135

BD137

BD139

BD135

BD137

BD139

BD135

BD137

BD139

100

V_CBO

Collector-Base Voltage (I_E= 0)

V_CEO

Collector-Emitter Voltage (I_B= 0)

V_CER

Collector-Emitter Voltage (R_BE= 1 kΩ)

100

V_EBO

I_C

Emitter-Base Voltage (I_C= 0)

Collector Current

1.5

0.5

I_C

I_CM

I_B

P_T

T_J

Base current

Total power Dissipation

Junction Temperature

Storage Temperature

_mb= 70°C

°C

150

-65 to +150

T_Stg

THERMAL CHARACTERISTICS

Symbol

Ratings

Value

Unit

R_thJ-c

R_thJ-a

Thermal Resistance, Junction-Case

Thermal Resistance, Junction-ambient in free air

100

°C/W

25/09/2012

27/08/201225/09/2012

COMSET SEMICONDUCTORS

1 | 3

12 3

中文翻译

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