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BD139-10 PDF预览

BD139-10

更新时间: 2024-11-03 13:47:55
品牌 Logo 应用领域
CENTRAL /
页数 文件大小 规格书
2页 175K
描述
80V,1.5A,1.25W Through-Hole Transistor-Bipolar Power (>1A) NPN General Purpose Amplifier/Switch

BD139-10 数据手册

 浏览型号BD139-10的Datasheet PDF文件第2页 
TM  
Central  
BD135  
BD137  
BD139  
Semiconductor Corp.  
NPN SILICON TRANSISTOR  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR BD135,  
BD137, and BD139 are NPN Silicon Epitaxial  
Planar Transistors designed for audio amplifier  
and switching applications.  
MARKING: FULL PART NUMBER  
TO-126 CASE  
MAXIMUM RATINGS: (T =25°C)  
SYMBOL BD135 BD137 BD139 UNITS  
C
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
V
V
45  
60  
100  
V
CBO  
CEO  
EBO  
45  
60  
80  
V
5.0  
V
Continuous Collector Current  
Peak Collector Current  
Continuous Base Current  
Peak Base Current  
I
1.5  
A
C
I
2.0  
A
CM  
I
0.5  
A
B
I
1.0  
A
BM  
Power Dissipation (T ≤70°C)  
P
8.0  
W
mb  
D
Power Dissipation (T =25°C)  
A
Operating and Storage Junction Temperature  
P
D
1.25  
-65 to +150  
10  
W
T , T  
°C  
°C/W  
°C/W  
J
stg  
Thermal Resistance  
Θ
Jmb  
Thermal Resistance  
Θ
100  
JA  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
C
SYMBOL  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNITS  
I
V
V
V
=30V  
100  
nA  
CBO  
CB  
CB  
EB  
I
=30V, T =125°C  
10  
µA  
nA  
V
CBO  
C
I
=5.0V  
100  
EBO  
BV  
I =30mA (BD135)  
45  
60  
80  
CEO  
C
BV  
I =30mA (BD137)  
C
V
CEO  
BV  
I =30mA (BD139)  
V
CEO  
C
V
I =500mA, I =50mA  
0.5  
1.0  
V
CE(SAT)  
C
B
V
V
=2.0V, I =500mA  
V
BE(ON)  
CE  
CE  
CE  
CE  
CE  
C
h
V
V
V
V
=2.0V, I =5.0mA  
C
=2.0V, I =150mA  
40  
63  
25  
FE  
h
250  
FE  
C
h
=2.0V, I =500mA  
C
=5.0V, I =50mA, f=100MHz  
FE  
f
190  
MHz  
T
C
BD135-10  
BD137-10  
BD139-10  
BD135-16  
BD137-16  
BD139-16  
SYMBOL  
TEST CONDITIONS  
=2.0V, I =500mA  
MIN  
MAX  
160  
MIN  
100  
MAX  
250  
h
V
63  
FE  
CE  
C
R3 (18-September 2009)  

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