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BD139 PDF预览

BD139

更新时间: 2024-11-01 22:48:19
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管
页数 文件大小 规格书
4页 36K
描述
NPN SILICON TRANSISTORS

BD139 数据手册

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BD135  
BD139  
NPN SILICON TRANSISTORS  
STMicroelectronics PREFERRED  
SALESTYPES  
DESCRIPTION  
The BD135 and BD139 are silicon epitaxial  
planar NPN transistors in Jedec SOT-32 plastic  
package, designed for audio amplifiers and  
drivers utilizing complementary or quasi  
compementary circuits.  
The complementary PNP types are BD136 and  
BD140 respectively.  
1
2
3
SOT-32  
INTERNAL SCHEMATIC DIAGRAM  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
Unit  
BD135  
45  
BD139  
80  
VCBO  
VCEO  
VEBO  
IC  
Collector-Base Voltage (IE = 0)  
Collector-Emitter Voltage (IB = 0)  
Emitter-Base Voltage (IC = 0)  
Collector Current  
V
V
45  
80  
5
1.5  
V
A
ICM  
IB  
Collector Peak Current  
3
A
Base Current  
0.5  
A
Total Dissipation at Tc 25 oC  
Ptot  
Ptot  
Tstg  
Tj  
12.5  
1.25  
-65 to 150  
150  
W
W
oC  
oC  
o
Total Dissipation at Tamb 25 C  
Storage Temperature  
Max. Operating Junction Temperature  
1/4  
May 1999  

BD139 替代型号

型号 品牌 替代类型 描述 数据表
BD139-16 STMICROELECTRONICS

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Complementary low voltage transistor
BD139-10 STMICROELECTRONICS

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Complementary low voltage transistor
BD139 ONSEMI

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POWER TRANSISTORS NPN SILICON

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