Datasheet > BD13910S

BD13910S

更新时间： 2024-11-03 11:11:27

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
6页	255K
描述
1.5 A, 80 V NPN Power Bipolar Junction Transistor

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BD13910S 技术参数

是否无铅：	不含铅	生命周期：	Active
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8541.29.00.95	Factory Lead Time：	1 week
风险等级：	0.86	Is Samacsys：	N
最大集电极电流 (IC)：	1.5 A	集电极-发射极最大电压：	80 V
配置：	SINGLE	最小直流电流增益 (hFE)：	63
JEDEC-95代码：	TO-126	JESD-30 代码：	R-PSFM-T3
JESD-609代码：	e3	元件数量：	1
端子数量：	3	最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	FLANGE MOUNT	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性/信道类型：	NPN	最大功率耗散 (Abs)：	13 W
认证状态：	Not Qualified	子类别：	Other Transistors
表面贴装：	NO	端子面层：	Tin (Sn)
端子形式：	THROUGH-HOLE	端子位置：	SINGLE
处于峰值回流温度下的最长时间：	NOT SPECIFIED	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	标称过渡频率 (fT)：	250 MHz
Base Number Matches：	1

BD13910S 数据手册

ON Semiconductor

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To learn more about onsemi™, please visit our website at

www.onsemi.com

onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or

subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi

product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without

notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,

or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all

liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,

regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/

or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application

by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized

for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for

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BD13910S 替代型号

型号	品牌	替代类型	描述	数据表
BD13910STU	ONSEMI	完全替代	1.5 A, 80 V NPN Power Bipolar Junction Transistor

与BD13910S相关器件

型号	品牌	获取价格	描述	数据表
BD13910STU	FAIRCHILD	获取价格	NPN Epitaxial Silicon Transistor
BD13910STU	ONSEMI	获取价格	1.5 A, 80 V NPN Power Bipolar Junction Transistor
BD139-10-T60-K	UTC	获取价格	Power Bipolar Transistor, 1.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plasti
BD13916	FAIRCHILD	获取价格	Power Bipolar Transistor, 1.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plasti
BD13916	CJ	获取价格	Transistor
BD139-16	STMICROELECTRONICS	获取价格	Complementary low voltage transistor
BD139-16	NXP	获取价格	NPN power transistors
BD139-16	CENTRAL	获取价格	Power Bipolar Transistor, 1.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plasti
BD139-16(TO-126)	UTC	获取价格	Transistor
BD13916S	ONSEMI	获取价格	1.5 A, 80 V NPN Power Bipolar Junction Transistor

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