Datasheet > BD1396

BD1396

更新时间： 2024-11-02 20:45:15

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		局域网
页数	文件大小	规格书
4页	40K
描述
Power Bipolar Transistor, 1.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin

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技术参数
数据手册

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BD1396 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	FLANGE MOUNT, R-PSFM-T3	Reach Compliance Code：	unknown
ECCN代码：	EAR99	HTS代码：	8541.29.00.95
风险等级：	5.49	Base Number Matches：	1

BD1396 数据手册

BD135/137/139

Medium Power Linear and Switching

Applications

•

Complement to BD136, BD138 and BD140 respectively

TO-126

1. Emitter 2.Collector 3.Base

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings ^{T =25°C unless otherwise noted}

Symbol

Parameter

Value

Units

Collector-Base Voltage

Collector-Emitter Voltage

: BD135

: BD137

: BD139

CBO

: BD135

: BD137

: BD139

CEO

EBO

Emitter-Base Voltage

Collector Current (DC)

Collector Current (Pulse)

Base Current

1.5

3.0

0.5

Collector Dissipation (T =25°C)

12.5

°C

Collector Dissipation (T =25°C)

1.25

Junction Temperature

Storage Temperature

150

- 55 ~ 150

STG

Electrical Characteristics ^{T =25°C unless otherwise noted}

Symbol

Parameter

Test Condition

Min.

Typ.

Max. Units

(sus)

Collector-Emitter Sustaining Voltage

CEO

: BD135

: BD137

: BD139

= 30mA, I = 0

Collector Cut-off Current

Emitter Cut-off Current

= 30V, I = 0

0.1

µA

CBO

= 5V, I = 0

EBO

DC Current Gain

: ALL DEVICE

: BD135

= 2V, I = 5mA

FE1

= 2V, I = 0.5A

FE2

FE3

= 2V, I = 150mA

250

160

: BD137, BD139

(sat)

Collector-Emitter Saturation Voltage

Base-Emitter ON Voltage

= 500mA, I = 50mA

0.5

(on)

= 2V, I = 0.5A

Classification

100 ~ 250

40 ~ 100

63 ~ 160

FE3

Rev. A, February 2000

12 3 4

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