Datasheet > BD137

BD137

更新时间： 2024-11-11 12:55:47

品牌	Logo	应用领域
永而佳 - WINNERJOIN		晶体晶体管
页数	文件大小	规格书
1页	126K
描述
TRANSISTOR (NPN)

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

BD137 数据手册

RoHS

BD135/137/139

BD135/BD137/BD139 TRANSISTOR (NPN)

TO-126

FEATURES

Power dissipation

P_CM:

1.25

1.5

W (Tamb=25℃)

1. EMITTER

Collector current

I_CM:

2. COLLECTOR

3. BASE

1 2 3

Operating and storage junction temperature range

T_J, T_stg: -55℃ to +150℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

BD135

MIN

TYP

MAX

UNIT

V_(BR)CBO

Collector-base breakdown voltage

BD137

BD139

BD135

BD137

BD139

Ic=100µA, I_E=0

Ic=30mA, I_B=0

V_(BR)CEO

Collector-emitter breakdown voltage

V_(BR)EBO

I_CBO

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

I_E=100µA, I_C=0

_CB=30V, I_E=0

V_EB=5V, I_C=0

_CE=2V, I_C=5mA

µA

0.1

I_EBO

h_FE(1)

BD135

250

160

DC current gain

h_FE(2)

_CE=2V, I_C=150mA

BD137/BD139

h_FE(3)

V_CE(sat)

V_BE

_CE=2V, I_C=500mA

I_C=500mA, I_B=50mA

_CE=2V, I_C=500mA

Collector-emitter saturation voltage

Base-emitter voltage

0.5

WEJ ELECTRONIC CO.,LTD

CLASSIFICATION OF h_FE(2)

Rank

Range

40-100

63-160

100-250

Http:// www.wej.cn

E-mail:wej@yongerjia.com

WEJ ELECTRONIC CO.

中文翻译

下载PDF

与BD137相关器件

型号	品牌	获取价格	描述	数据表
BD137_15	UTC	获取价格	NPN POWER TRANSISTORS
BD13710	CJ	获取价格	Transistor
BD13710	FAIRCHILD	获取价格	Power Bipolar Transistor, 1.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plasti
BD137-10	INFINEON	获取价格	NPN SILICON TRANSISTORS
BD137-10	COMSET	获取价格	Transistor
BD137-10	CENTRAL	获取价格	Power Bipolar Transistor, 1.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plasti
BD137-10	NXP	获取价格	NPN power transistors
BD13710S	FAIRCHILD	获取价格	Power Bipolar Transistor, 1.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plasti
BD13710S	ONSEMI	获取价格	1.5 A, 60 V NPN Power Bipolar Junction Transistor
BD13710STU	FAIRCHILD	获取价格	NPN Epitaxial Silicon Transistor