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BD137-6-BP PDF预览

BD137-6-BP

更新时间: 2024-11-11 14:35:11
品牌 Logo 应用领域
美微科 - MCC 局域网晶体管
页数 文件大小 规格书
3页 381K
描述
Power Bipolar Transistor, 1.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, ROHS COMPLIANT, PLASTIC PACKAGE-3

BD137-6-BP 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Obsolete零件包装代码:SIP
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.61Is Samacsys:N
最大集电极电流 (IC):1.5 A集电极-发射极最大电压:60 V
配置:SINGLE最小直流电流增益 (hFE):40
JEDEC-95代码:TO-126JESD-30 代码:R-PSFM-T3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
认证状态:Not Qualified表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICONBase Number Matches:1

BD137-6-BP 数据手册

 浏览型号BD137-6-BP的Datasheet PDF文件第2页浏览型号BD137-6-BP的Datasheet PDF文件第3页 
M C C  
BD135-6/10/16  
BD137-6/10/16  
BD139-6/10/16  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
Micro Commercial Components  
)HDWXUHVꢀ  
·
Halogen free available upon request by adding suffix "-HF"  
·
Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates  
RoHS Compliant. See ordering information)  
Epoxy meets UL 94 V-0 flammability rating  
Moisure Sensitivity Level 1  
Power Transistors  
NPN Silicon  
·
·
DC Current Gain - hFE = 40 (Min) @IC = 150mAdc  
Complementary with BD136, BD138, BD140  
45,60,80 Volts  
0D[LPXPꢀ5DWLQJVꢀ  
Rating  
Collector-Emitter Voltage  
Symbol  
Value  
Unit  
ꢀꢁꢂꢃꢄꢅꢆ  
BD135  
BD137  
BD139  
45  
60  
80  
K
A
VCEO  
Vdc  
N
Collector-Base Voltage  
BD135  
BD137  
BD139  
45  
60  
80  
5.0  
1.5  
0.5  
VCBO  
Vdc  
D
E
Emitter-Base Voltage  
Collector Current  
VEBO  
IC  
IB  
Vdc  
Adc  
Adc  
M
B
Base Current  
Total Device Dissipation @TA=25  
Derate above 25  
Total Device Dissipation @TC=25  
Derate above 25  
Operating & Storage Temperature Range  
Maximum Thermal Resistance Junction to  
Case  
Maximum Thermal Resistance Junction to  
Ambient Air  
Watt  
mW/  
1.25  
10  
PD  
Watt  
mW/  
12.5  
100  
1
2
3
PD  
TJ, TSTG  
R
-55 to +150  
L
G
/W  
/W  
10  
R
100  
°
C
Symbol  
BVCEO  
Parameter  
Min  
Max  
Units  
Collector-Emitter Sustaining Voltage*  
(IC=30mA,IB=0) BD135  
BD137  
Vdc  
45  
60  
80  
BD139  
F
Q
ICBO  
Collector Cutoff Current  
(VCB=30Vdc, IE=0)  
(VCB=30Vdc, IE=0, TC=125  
0.1  
10  
µAdc  
µAdc  
PIN 1.  
PIN 2.  
PIN 3.  
EMITTER  
COLLECTOR  
BASE  
J
)
IEBO  
Emitter Cutoff Current  
(VBE=5.0Vdc, IC=0)  
10  
DIMENSIONS  
DC Current Gain*  
ꢀꢁꢂꢃꢄꢅꢆ  
ꢇꢀꢁꢆ  
ꢇꢇꢆ  
ꢇꢀꢁꢆ  
hFE(1)  
hFE(2)  
hFE(3)  
VCE(sat)  
(IC=5mAdc, VCE=2Vdc)  
(IC=0.5Adc, VCE=2Vdc)  
(IC=150mAdc, VCE=2Vdc)  
Collector-Emitter Saturation Voltage  
(IC=500mAdc, IB=50mAdc)  
Base-Emitter ON Voltage  
(VCE=2V, IC=0.5A)  
25  
25  
40  
ꢈꢀꢇꢆ  
ꢇꢉꢊꢆ  
ꢇꢉꢊꢆ  
ꢁꢋꢌꢄꢆ  
ꢉꢆ  
0.291  
0.417  
0.602  
ꢎꢏꢐꢑ4  
0.118  
0.026  
0.046  
0.307ꢆ  
0.433  
0.618  
ꢎꢏꢐꢒ1  
0.126  
0.034  
0.054  
7.40  
10.60  
15.30  
3.90  
3.00  
0.66  
7.80  
11.00  
15.70  
4.10  
3.20  
0.86  
1.37  
250  
0.5  
1
ꢂꢆ  
ꢈꢆ  
ꢄꢆ  
Vdc  
Vdc  
VBE(on)  
1.17  
ꢕꢆ  
0.090TYP  
2.290TYP  
FE(3)  
CLASSIFICATION OF H  
Rank  
ꢖꢆ  
0.098  
0.114  
2.50  
2.90  
L
M
N
0.083  
0.000  
0.043  
0.091  
0.012  
0.059  
2.10  
0.00  
1.10  
2.30  
0.30  
1.50  
6
10  
63-160  
16  
100-250  
Range  
40-100  
Q
0.018  
0.024  
0.45  
0.60  
*Pulse test: Pulse width 300 µsec, Duty cycle 2%  
Notes: 1. High Temperature Solder Exemption Applied, see EU Directive Annex Notes 7.  
www.mccsemi.com  
1 of 3  
Revision: C  
2014/01/02  

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