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BD1376S PDF预览

BD1376S

更新时间: 2024-11-11 15:45:11
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 局域网开关晶体管
页数 文件大小 规格书
5页 140K
描述
Power Bipolar Transistor, 1.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin,

BD1376S 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:ObsoleteReach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:5.43最大集电极电流 (IC):1.5 A
集电极-发射极最大电压:60 V配置:SINGLE
最小直流电流增益 (hFE):40JEDEC-95代码:TO-126
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
最大功率耗散 (Abs):13 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):250 MHzBase Number Matches:1

BD1376S 数据手册

 浏览型号BD1376S的Datasheet PDF文件第2页浏览型号BD1376S的Datasheet PDF文件第3页浏览型号BD1376S的Datasheet PDF文件第4页浏览型号BD1376S的Datasheet PDF文件第5页 
August 2013  
BD135 / 137 / 139  
NPN Epitaxial Silicon Transistor  
Features  
• Complement to BD136, BD138 and BD140 respectively  
Applications  
Medium Power Linear and Switching  
TO-126  
1. Emitter 2.Collector 3.Base  
1
Ordering Information  
Part Number  
BD13516S  
Marking  
BD135-16  
BD135-6  
Package  
Packing Method  
Bulk  
BD1356STU  
BD13510STU  
BD13516STU  
BD13716STU  
BD13710STU  
BD13716S  
BD135-10  
BD135-16  
BD137-16  
BD137-10  
BD137-16  
BD139-16  
BD139-10  
BD139-16  
BD139-6  
Rail  
TO-126 3L  
Bulk  
Rail  
BD13916STU  
BD13910S  
Bulk  
Rail  
BD13916S  
BD1396STU  
BD13910STU  
BD139-10  
© 2007 Fairchild Semiconductor Corporation  
BD135 / 137 / 139 Rev. 1.2.0  
www.fairchildsemi.com  
1

BD1376S 替代型号

型号 品牌 替代类型 描述 数据表
BD1376STU FAIRCHILD

完全替代

Power Bipolar Transistor, 1.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plasti
BD137G ONSEMI

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Plastic Medium Power Silicon NPN Transistor

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