是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.95 |
风险等级: | 5.45 | Is Samacsys: | N |
最大集电极电流 (IC): | 1.5 A | 集电极-发射极最大电压: | 60 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 40 |
JEDEC-95代码: | TO-126 | JESD-30 代码: | R-PSFM-T3 |
JESD-609代码: | e3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | NPN | 最大功率耗散 (Abs): | 13 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | NO | 端子面层: | Matte Tin (Sn) |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 250 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
BD1376S | FAIRCHILD |
完全替代 |
Power Bipolar Transistor, 1.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plasti | |
BD137G | ONSEMI |
类似代替 |
Plastic Medium Power Silicon NPN Transistor |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BD137G | ONSEMI |
获取价格 |
Plastic Medium Power Silicon NPN Transistor | |
BD137G-10-T60-K | UTC |
获取价格 |
Power Bipolar Transistor | |
BD137G-6-AA3-R | UTC |
获取价格 |
Small Signal Bipolar Transistor | |
BD137G-6-T60-K | UTC |
获取价格 |
Power Bipolar Transistor | |
BD137G-XX-T60-K | UTC |
获取价格 |
NPN POWER TRANSISTORS | |
BD137L-10-T60-K | UTC |
获取价格 |
Power Bipolar Transistor | |
BD137L-6-T60-K | UTC |
获取价格 |
Power Bipolar Transistor | |
BD137LEADFREE | CENTRAL |
获取价格 |
Power Bipolar Transistor, 1.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plasti | |
BD137L-XX-T60-K | UTC |
获取价格 |
NPN POWER TRANSISTORS | |
BD137T | SEMTECH |
获取价格 |
NPN Silicon Epitaxial Power Transistor |