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BD138 PDF预览

BD138

更新时间: 2024-11-12 13:47:55
品牌 Logo 应用领域
CENTRAL /
页数 文件大小 规格书
2页 340K
描述
60V,1.5A,1.25W Through-Hole Transistor-Bipolar Power (>1A) PNP General Purpose Amplifier/Switch

BD138 数据手册

 浏览型号BD138的Datasheet PDF文件第2页 
BD136  
BD138  
BD140  
www.centralsemi.com  
DESCRIPTION:  
SILICON  
The CENTRAL SEMICONDUCTOR BD136, BD138,  
and BD140 are silicon PNP epitaxial planar transistors  
designed for audio amplifier and switching applications.  
PNP TRANSISTORS  
MARKING: FULL PART NUMBER  
TO-126 CASE  
MAXIMUM RATINGS: (T =25°C unless otherwise noted)  
C
SYMBOL BD136  
BD138  
BD140  
UNITS  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Continuous Collector Current  
Peak Collector Current  
Continuous Base Current  
Peak Base Current  
V
V
V
45  
45  
60  
60  
5.0  
1.5  
2.0  
0.5  
1.0  
8.0  
100  
80  
V
V
V
A
A
A
A
W
W
CBO  
CEO  
EBO  
I
C
I
CM  
I
B
I
BM  
Power Dissipation (T <70°C)  
P
P
mb  
D
D
Power Dissipation (T =25°C)  
A
1.25  
-65 to +150  
10  
Operating and Storage Junction Temperature  
Thermal Resistance  
T , T  
°C  
°C/W  
°C/W  
J
stg  
Jmb  
JA  
Θ
Thermal Resistance  
Θ
100  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
C
SYMBOL  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNITS  
I
I
I
V
V
V
=30V  
=30V (T =125°C)  
=5.0V  
100  
10  
100  
nA  
CBO  
CBO  
EBO  
CEO  
CEO  
CEO  
CE(SAT)  
BE(ON)  
FE  
CB  
CB  
EB  
μA  
nA  
V
V
V
C
BV  
BV  
BV  
V
V
h
h
h
I =30mA (BD136)  
45  
60  
80  
C
I =30mA (BD138)  
C
I =30mA (BD140)  
C
I =500mA, I =50mA  
0.5  
1.0  
V
V
C
B
C
C
C
C
C
V
=2.0V, I =500mA  
=2.0V, I =5.0mA  
=2.0V, I =150mA  
=2.0V, I =500mA  
CE  
CE  
CE  
CE  
CE  
V
V
V
V
40  
63  
25  
250  
FE  
FE  
f
=5.0V, I =50mA, f=100MHz  
160  
MHz  
T
BD136-10  
BD138-10  
BD140-10  
BD136-16  
BD138-16  
BD140-16  
SYMBOL  
TEST CONDITIONS  
=2.0V, I =150mA  
MIN  
63  
MAX  
160  
MIN  
100  
MAX  
250  
h
V
FE  
CE  
C
R3 (13-March 2014)  

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