5秒后页面跳转
BD13710 PDF预览

BD13710

更新时间: 2024-11-11 20:45:15
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
4页 40K
描述
Power Bipolar Transistor, 1.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin

BD13710 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:FLANGE MOUNT, R-PSFM-T3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:5.46最大集电极电流 (IC):1.5 A
集电极-发射极最大电压:60 V配置:SINGLE
最小直流电流增益 (hFE):63JEDEC-95代码:TO-126
JESD-30 代码:R-PSFM-T3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
最大功率耗散 (Abs):13 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):250 MHzBase Number Matches:1

BD13710 数据手册

 浏览型号BD13710的Datasheet PDF文件第2页浏览型号BD13710的Datasheet PDF文件第3页浏览型号BD13710的Datasheet PDF文件第4页 
BD135/137/139  
Medium Power Linear and Switching  
Applications  
Complement to BD136, BD138 and BD140 respectively  
TO-126  
1. Emitter 2.Collector 3.Base  
1
NPN Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
Units  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
: BD135  
: BD137  
: BD139  
45  
60  
80  
V
V
V
CBO  
V
: BD135  
: BD137  
: BD139  
45  
60  
80  
V
V
V
CEO  
EBO  
V
Emitter-Base Voltage  
Collector Current (DC)  
Collector Current (Pulse)  
Base Current  
5
1.5  
V
A
I
I
I
C
3.0  
A
CP  
B
0.5  
A
P
Collector Dissipation (T =25°C)  
12.5  
W
W
°C  
°C  
C
C
P
Collector Dissipation (T =25°C)  
1.25  
C
a
T
T
Junction Temperature  
Storage Temperature  
150  
J
- 55 ~ 150  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Test Condition  
Min.  
Typ.  
Max. Units  
V
(sus)  
Collector-Emitter Sustaining Voltage  
CEO  
: BD135  
: BD137  
: BD139  
I
= 30mA, I = 0  
45  
60  
80  
V
V
V
C
B
I
Collector Cut-off Current  
Emitter Cut-off Current  
V
V
= 30V, I = 0  
0.1  
10  
µA  
µA  
CBO  
CB  
E
I
= 5V, I = 0  
C
EBO  
EB  
h
h
h
DC Current Gain  
: ALL DEVICE  
: ALL DEVICE  
: BD135  
V
V
V
= 2V, I = 5mA  
25  
25  
40  
40  
FE1  
CE  
CE  
CE  
C
= 2V, I = 0.5A  
FE2  
FE3  
C
= 2V, I = 150mA  
250  
160  
C
: BD137, BD139  
V
V
(sat)  
Collector-Emitter Saturation Voltage  
Base-Emitter ON Voltage  
I
= 500mA, I = 50mA  
0.5  
1
V
V
CE  
BE  
C
B
(on)  
V
= 2V, I = 0.5A  
CE  
C
h
Classification  
FE  
Classification  
6
10  
16  
100 ~ 250  
h
40 ~ 100  
63 ~ 160  
FE3  
©2000 Fairchild Semiconductor International  
Rev. A, February 2000  

与BD13710相关器件

型号 品牌 获取价格 描述 数据表
BD137-10 INFINEON

获取价格

NPN SILICON TRANSISTORS
BD137-10 COMSET

获取价格

Transistor
BD137-10 CENTRAL

获取价格

Power Bipolar Transistor, 1.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plasti
BD137-10 NXP

获取价格

NPN power transistors
BD13710S FAIRCHILD

获取价格

Power Bipolar Transistor, 1.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plasti
BD13710S ONSEMI

获取价格

1.5 A, 60 V NPN Power Bipolar Junction Transistor
BD13710STU FAIRCHILD

获取价格

NPN Epitaxial Silicon Transistor
BD13710STU ONSEMI

获取价格

1.5 A, 60 V NPN Power Bipolar Junction Transistor
BD13710STU_NL FAIRCHILD

获取价格

Power Bipolar Transistor, 1.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plasti
BD13716 FAIRCHILD

获取价格

Power Bipolar Transistor, 1.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plasti