是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.95 |
风险等级: | 5.46 | 最大集电极电流 (IC): | 1.5 A |
集电极-发射极最大电压: | 60 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 63 | JEDEC-95代码: | TO-126 |
JESD-30 代码: | R-PSFM-T3 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | NPN |
最大功率耗散 (Abs): | 13 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | NO |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 250 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BD137-10 | INFINEON |
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NPN SILICON TRANSISTORS | |
BD137-10 | COMSET |
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Transistor | |
BD137-10 | CENTRAL |
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Power Bipolar Transistor, 1.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plasti | |
BD137-10 | NXP |
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NPN power transistors | |
BD13710S | FAIRCHILD |
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Power Bipolar Transistor, 1.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plasti | |
BD13710S | ONSEMI |
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1.5 A, 60 V NPN Power Bipolar Junction Transistor | |
BD13710STU | FAIRCHILD |
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NPN Epitaxial Silicon Transistor | |
BD13710STU | ONSEMI |
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1.5 A, 60 V NPN Power Bipolar Junction Transistor | |
BD13710STU_NL | FAIRCHILD |
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Power Bipolar Transistor, 1.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plasti | |
BD13716 | FAIRCHILD |
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Power Bipolar Transistor, 1.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plasti |