Datasheet > BD137

BD137

更新时间： 2024-11-11 12:23:43

品牌	Logo	应用领域
COMSET		晶体晶体管局域网
页数	文件大小	规格书
3页	73K
描述
SILICON PLANAR EPITAXIAL POWER TRANSISTORS

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数据手册

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BD137 数据手册

NPN BD135 – BD137 – BD139

SILICON PLANAR EPITAXIAL POWER TRANSISTORS.

The BD135-BD137-BD139 are NPN Transistors

They are recommended for driver stages in hi-fi amplifiers and television circuits.

They are mounted in Jedec TO-126 plastic package.

PNP complements are BD136-BD138-BD140.

Compliance to RoHS

ABSOLUTE MAXIMUM RATINGS

Symbol

Ratings

Value

Unit

BD135

BD137

BD139

BD135

BD137

BD139

BD135

BD137

BD139

100

V_CBO

Collector-Base Voltage (I_E= 0)

V_CEO

Collector-Emitter Voltage (I_B= 0)

V_CER

Collector-Emitter Voltage (R_BE= 1 kΩ)

100

V_EBO

I_C

Emitter-Base Voltage (I_C= 0)

Collector Current

1.5

0.5

I_C

I_CM

I_B

P_T

T_J

Base current

Total power Dissipation

Junction Temperature

Storage Temperature

_mb= 70°C

°C

150

-65 to +150

T_Stg

THERMAL CHARACTERISTICS

Symbol

Ratings

Value

Unit

R_thJ-c

R_thJ-a

Thermal Resistance, Junction-Case

Thermal Resistance, Junction-ambient in free air

100

°C/W

25/09/2012

27/08/201225/09/2012

COMSET SEMICONDUCTORS

1 | 3

12 3

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BD137-10	INFINEON	获取价格	NPN SILICON TRANSISTORS
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BD13710S	FAIRCHILD	获取价格	Power Bipolar Transistor, 1.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plasti
BD13710S	ONSEMI	获取价格	1.5 A, 60 V NPN Power Bipolar Junction Transistor
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