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BCX6825E6327HTSA1 PDF预览

BCX6825E6327HTSA1

更新时间: 2024-09-14 14:48:03
品牌 Logo 应用领域
英飞凌 - INFINEON 放大器晶体管
页数 文件大小 规格书
7页 519K
描述
Small Signal Bipolar Transistor, 1A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, SOT-89, 3 PIN

BCX6825E6327HTSA1 技术参数

是否Rohs认证:符合生命周期:Obsolete
包装说明:SMALL OUTLINE, R-PSSO-F3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:7.07
Is Samacsys:N外壳连接:COLLECTOR
最大集电极电流 (IC):1 A集电极-发射极最大电压:20 V
配置:SINGLE最小直流电流增益 (hFE):160
JESD-30 代码:R-PSSO-F3湿度敏感等级:1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
最大功率耗散 (Abs):3 W子类别:Other Transistors
表面贴装:YES端子形式:FLAT
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):100 MHzBase Number Matches:1

BCX6825E6327HTSA1 数据手册

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BCX68...  
NPN Silicon AF Transistors  
1
For general AF applications  
High collector current  
2
3
2
High current gain  
Low collector-emitter saturation voltage  
Complementary type: BCX69 (PNP)  
Pb-free (RoHS compliant) package  
Qualified according AEC Q101  
Type  
Marking  
CB  
CC  
Pin Configuration  
Package  
BCX68-10  
BCX68-16  
BCX68-25  
1=B  
1=B  
1=B  
2=C  
2=C  
2=C  
3=E  
3=E  
3=E  
SOT89  
SOT89  
SOT89  
CD  
Maximum Ratings  
Parameter  
Symbol  
Value  
Unit  
20  
25  
5
V
Collector-emitter voltage  
Collector-base voltage  
Emitter-base voltage  
Collector current  
V
V
V
CEO  
CBO  
EBO  
1
A
I
C
2
Peak collector current, t 10 ms  
I
p
CM  
100  
200  
3
mA  
W
Base current  
Peak base current  
Total power dissipation-  
I
B
I
BM  
P
tot  
T 114 °C  
S
150  
°C  
Junction temperature  
Storage temperature  
T
j
T
-65 ... 150  
stg  
Thermal Resistance  
Parameter  
Junction - soldering point  
Symbol  
Value  
12  
Unit  
K/W  
1)  
R
thJS  
1
For calculation of R  
please refer to Application Note AN077 (Thermal Resistance Calculation)  
thJA  
2011-10-06  
1

BCX6825E6327HTSA1 替代型号

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