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BCX68E6327 PDF预览

BCX68E6327

更新时间: 2024-11-02 15:28:31
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体管
页数 文件大小 规格书
4页 111K
描述
Small Signal Bipolar Transistor, 1A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon

BCX68E6327 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PSSO-F3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.43外壳连接:COLLECTOR
最大集电极电流 (IC):1 A集电极-发射极最大电压:20 V
配置:SINGLE最小直流电流增益 (hFE):85
JESD-30 代码:R-PSSO-F3JESD-609代码:e3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子面层:MATTE TIN端子形式:FLAT
端子位置:SINGLE晶体管元件材料:SILICON
标称过渡频率 (fT):100 MHzBase Number Matches:1

BCX68E6327 数据手册

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与BCX68E6327相关器件

型号 品牌 获取价格 描述 数据表
BCX68E6433 INFINEON

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Small Signal Bipolar Transistor, 1A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon
BCX68-T1 NEC

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Small Signal Bipolar Transistor, 1A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, POWER, PL
BCX68-T1CB NEC

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Small Signal Bipolar Transistor, 1A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, POWER, PL
BCX68-T1CC NEC

获取价格

Small Signal Bipolar Transistor, 1A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, POWER, PL
BCX68-T1CD NEC

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Small Signal Bipolar Transistor, 1A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, POWER, PL
BCX68-T2 NEC

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Small Signal Bipolar Transistor, 1A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, POWER, PL
BCX68-T2CB NEC

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Small Signal Bipolar Transistor, 1A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, POWER, PL
BCX68-T2CC NEC

获取价格

Small Signal Bipolar Transistor, 1A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, POWER, PL
BCX68-T2CD NEC

获取价格

Small Signal Bipolar Transistor, 1A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, POWER, PL
BCX68TA DIODES

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Small Signal Bipolar Transistor, 1A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon