Datasheet > BCX69

BCX69

更新时间： 2024-09-16 14:54:47

品牌	Logo	应用领域
江苏长电/长晶 - CJ		放大器晶体管
页数	文件大小	规格书
3页	1630K
描述
SOT-89-3L

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中文翻译

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数据手册

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BCX69 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

SOT-89-3L Plastic-Encapsulate Transistors

BCX69 TRANSISTOR (PNP)

SOT-89-3L

1. ^BASE

FEATURES

For general AF applications

High collector current

High current gain

Low collector-emitter saturation voltage

Complementary type: BCX68 (NPN)

2. ^COLLECTOR

3. ^EMITTER

MARKING

CE1

CF1

CG1

CH1

BCX69-16 BCX69-25

100-250 160-375

BCX69

BCX69-10

85-375

85-160

MAXIMUM RATINGS (T^a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Value

-25

-20

-5

Unit

Collector Current -Continuous

Collector Dissipation

-1

P_C

0.8

Operation Junction and

Storage Temperature Range

T_J,T_stg

-55~150

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBOI_C=-10μA , I_E=0

-25

-20

-5

V_(BR)CEOI_C=-30mA , I_B=0

V_(BR)EBO

I_CBO

I_E=-1μA, I_C=0

V_CB=-25V, I_E=0

V_EB=-5V, I_C=0

-0.1

μA

Emitter cut-off current

I_EBO

DC current gain

BCX69

100

160

375

160

250

375

BCX69-10

BCX69-16

BCX69-25

h_{FE (1)}

V_CE=-1V, I_C=-500mA

h_FE(2)

V_CE=-10V, I_C=-5mA

V_CE=-1V, I_C=-1A

h_FE(3)

Collector-emitter saturation voltage

Base-emitter voltage

V_CE(sat)

I_C=-1A, I_B=-100mA

-0.5

-1

I_C=-5mA, V_CE=-10V

I_C=-1A, V_CE=-1V

-0.6

100

V_BE(ON)

V_CE=-5V, I_C=-100mA

Transition frequency

f _T

MHz

f=20MHz

¹⁾Pulse test: t ≤=300µs, D = 2%

www.jscj-elec.com

Rev. - 2.2

12 3

中文翻译

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