生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PSSO-F3 |
Reach Compliance Code: | unknown | 风险等级: | 5.67 |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 1 A |
集电极-发射极最大电压: | 20 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 190 | JESD-30 代码: | R-PSSO-F3 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | NPN | 功耗环境最大值: | 2 W |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | FLAT | 端子位置: | SINGLE |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 120 MHz | VCEsat-Max: | 0.5 V |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BCX68-T2 | NEC |
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Small Signal Bipolar Transistor, 1A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, POWER, PL | |
BCX68-T2CB | NEC |
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Small Signal Bipolar Transistor, 1A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, POWER, PL | |
BCX68-T2CC | NEC |
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Small Signal Bipolar Transistor, 1A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, POWER, PL | |
BCX68-T2CD | NEC |
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Small Signal Bipolar Transistor, 1A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, POWER, PL | |
BCX68TA | DIODES |
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Small Signal Bipolar Transistor, 1A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon | |
BCX68TC | DIODES |
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Transistor, | |
BCX69 | INFINEON |
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PNP Silicon AF Transistors (For general AF applications High collector current) | |
BCX69 | NEC |
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Small Signal Bipolar Transistor, 1A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, POWER, PL | |
BCX69 | TYSEMI |
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For general AF applications. High collector current. High current gain. | |
BCX69 | KEXIN |
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PNP Silicon AF Transistors |