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BCX69 PDF预览

BCX69

更新时间: 2024-09-16 14:55:55
品牌 Logo 应用领域
鲁光 - LGE 放大器双极型晶体管
页数 文件大小 规格书
2页 713K
描述
双极型晶体管

BCX69 技术参数

极性:PNPCollector-emitter breakdown voltage:20
Collector Current - Continuous:1DC current gain - Min:85
DC current gain - Max:375Transition frequency:100
Package:SOT-89Storage Temperature Range:-55-150
class:Transistors

BCX69 数据手册

 浏览型号BCX69的Datasheet PDF文件第2页 
BCX69  
SOT-89 Transistor(PNP)  
1. BASE  
SOT-89  
1
2. COLLECTOR  
3. EMITTER  
4.6  
B
2
4.4  
1.6  
1.4  
1.8  
1.4  
3
Features  
2.6  
2.4  
4.25  
3.75  
—
For general AF applications  
High collector current  
High current gain  
Low collector-emitter saturation voltage  
Complementary type: BCX68 (NPN)  
0.8  
MIN  
0.53  
—
—
—
—
0.40  
0.48  
2x)  
0.35  
1.5  
0.44  
0.37  
0.13  
B
3.0  
Dimensions in inches and (millimeters)  
MAXIMUM RATINGS (TA=25unless otherwise noted)  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Parameter  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current -Continuous  
Collector Dissipation  
Value  
-25  
Units  
V
-20  
V
-5  
V
-1  
A
PC  
0.8  
W
TJ  
Junction Temperature  
Storage Temperature  
150  
-65-150  
Tstg  
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)  
Parameter  
Symbol  
Test  
conditions  
MIN  
TYP  
MAX  
UNIT  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
V(BR)CBO IC=-10μA , IE=0  
-25  
-20  
-5  
V
V
V(BR)CEO IC=-30mA , IB=0  
V(BR)EBO  
ICBO  
IE=-1μA, IC=0  
VCB=-25V, IE=0  
VEB=-5V, IC=0  
V
-0.1  
-0.1  
μA  
μA  
Emitter cut-off current  
IEBO  
DC current gain  
BCX69  
85  
85  
100  
160  
375  
160  
250  
375  
BCX69-10  
BCX69-16  
BCX69-25  
1)  
hFE (1)  
VCE=-1V, IC=-500mA  
1)  
hFE(2)  
VCE=-10V, IC=-5mA  
VCE=-1V, IC=-1A  
50  
60  
1)  
hFE(3)  
Collector-emitter saturation voltage  
Base-emitter voltage  
VCE(sat)  
IC=-1A, IB=-100mA  
-0.5  
-1  
V
V
IC=-5mA, VCE=-10V  
IC=-1A, VCE=-1V  
-0.6  
100  
1)  
VBE(ON)  
VCE=-5V, IC=-100mA  
Transition frequency  
f T  
MHz  
f=20MHz  
1)  
Pulse test: t =300µs, D = 2%  
MARKING: BCX69=CE1 BCX69-10=CF1 BCX69-16=CG1 BCX69-25=CH1  
http://www.lgesemi.com  
Revision:20170701-P1  
mail:lge@lgesemi.com  

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