是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Not Recommended | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
Factory Lead Time: | 4 weeks | 风险等级: | 5.56 |
Is Samacsys: | N | 其他特性: | LOW NOISE |
最大集电极电流 (IC): | 0.1 A | 集电极-发射极最大电压: | 32 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 90 |
JESD-30 代码: | R-PDSO-G3 | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 3 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | NPN |
认证状态: | Not Qualified | 表面贴装: | YES |
端子面层: | Tin (Sn) | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 250 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BCW60FFE6433 | INFINEON |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon |
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BCW60FN | INFINEON |
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NPN Silicon AF Transistors (For AF input stages and driver applications High current gain) |
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BCW60FNE6327 | INFINEON |
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Small Signal Bipolar Transistor, 0.1A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon |
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BCW60FNE6393 | INFINEON |
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Small Signal Bipolar Transistor, |
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BCW60FNE6433 | INFINEON |
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Small Signal Bipolar Transistor, 0.1A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon |
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BCW60R | ETC |
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TRANSISTOR | BJT | NPN | 32V V(BR)CEO | 200MA I(C) | TO-236 |
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BCW60RA | ETC |
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TRANSISTOR | BJT | NPN | 32V V(BR)CEO | 200MA I(C) | TO-236 |
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BCW60RB | ETC |
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TRANSISTOR | BJT | NPN | 32V V(BR)CEO | 200MA I(C) | TO-236 |
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BCW60RC | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 32V V(BR)CEO | 200MA I(C) | TO-236 |
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BCW60RD | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 32V V(BR)CEO | 200MA I(C) | TO-236 |
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