BCW30LT1G
General Purpose
Transistors
PNP Silicon
http://onsemi.com
Features
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
COLLECTOR
3
Compliant
1
BASE
MAXIMUM RATINGS
Rating
Symbol
Value
−32
Unit
Vdc
2
EMITTER
Collector − Emitter Voltage
Collector − Base Voltage
Emitter-Base Voltage
V
CEO
V
CBO
−32
Vdc
V
EBO
−5.0
−100
Vdc
3
Collector Current − Continuous
I
C
mAdc
THERMAL CHARACTERISTICS
Characteristic
1
2
Symbol
Value
Unit
SOT−23 (TO−236AB)
CASE 318−08
STYLE 6
Total Device Dissipation
FR-5 Board (Note 1)
T = 25°C
A
P
D
mW
225
Derate above 25°C
1.8
mW/°C
°C/W
Thermal Resistance,
R
q
JA
556
MARKING DIAGRAM
Junction−to−Ambient
Total Device Dissipation
Alumina Substrate (Note 2)
P
300
mW
D
C2 M G
G
T = 25°C
A
1
Derate above 25°C
2.4
mW/°C
°C/W
C2
M
G
= Specific Device Code
= Date Code*
= Pb−Free Package
Thermal Resistance,
Junction−to−Ambient
R
q
417
JA
Junction and Storage Temperature
T , T
J
−55 to +150
°C
stg
(Note: Microdot may be in either location)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 ꢀ 0.75 ꢀ 0.062 in.
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
2. Alumina = 0.4 ꢀ 0.3 ꢀ 0.024 in. 99.5% alumina.
ORDERING INFORMATION
Device
Package
Shipping
BCW30LT1G
SOT−23
3000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2009
1
Publication Order Number:
August, 2009 − Rev. 2
BCW30LT1/D