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BCW30LT1G PDF预览

BCW30LT1G

更新时间: 2024-01-12 22:22:21
品牌 Logo 应用领域
安森美 - ONSEMI 晶体小信号双极晶体管光电二极管
页数 文件大小 规格书
7页 237K
描述
General Purpose Transistors

BCW30LT1G 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.61
最大集电极电流 (IC):0.1 A配置:Single
最小直流电流增益 (hFE):215最高工作温度:150 °C
极性/信道类型:PNP最大功率耗散 (Abs):0.225 W
子类别:Other Transistors表面贴装:YES
Base Number Matches:1

BCW30LT1G 数据手册

 浏览型号BCW30LT1G的Datasheet PDF文件第1页浏览型号BCW30LT1G的Datasheet PDF文件第2页浏览型号BCW30LT1G的Datasheet PDF文件第3页浏览型号BCW30LT1G的Datasheet PDF文件第4页浏览型号BCW30LT1G的Datasheet PDF文件第6页浏览型号BCW30LT1G的Datasheet PDF文件第7页 
BCW30LT1G  
TYPICAL DYNAMIC CHARACTERISTICS  
500  
1000  
V = -3.0 V  
CC  
I /I = 10  
V
CC  
I /I = 10  
= 3.0 V  
700  
500  
300  
200  
C B  
C B  
I = I  
B1 B2  
T = 25°C  
J
t
s
300  
200  
T = 25°C  
J
100  
70  
50  
100  
70  
50  
30  
20  
t
r
t
f
30  
20  
t @ V  
d
= 0.5 V  
BE(off)  
10  
7.0  
5.0  
10  
1.0  
2.0 3.0  
5.0 7.0 10  
20 30  
50 70 100  
-1.0  
-2.0 -3.0  
-10  
-20 -30  
-100  
-50 -70  
-5.0 -7.0  
I , COLLECTOR CURRENT (mA)  
C
I , COLLECTOR CURRENT (mA)  
C
Figure 11. TurnOn Time  
Figure 12. TurnOff Time  
500  
10  
T = 25°C  
J
T = 25°C  
J
7.0  
5.0  
V
CE  
= 20 V  
300  
200  
C
ib  
5.0 V  
3.0  
2.0  
100  
70  
C
ob  
50  
1.0  
0.5 0.7 1.0  
2.0 3.0  
5.0 7.0 10  
20 30  
50  
0.05 0.1  
0.2  
0.5  
1.0  
2.0  
5.0  
10  
20  
50  
I , COLLECTOR CURRENT (mA)  
C
V , REVERSE VOLTAGE (VOLTS)  
R
Figure 13. CurrentGain — Bandwidth Product  
Figure 14. Capacitance  
20  
10  
200  
100  
V = -10 Vdc  
CE  
f = 1.0 kHz  
V = 10 Vdc  
CE  
f = 1.0 kHz  
T = 25°C  
A
T = 25°C  
A
h
300  
@ I = -1.0 mA  
7.0  
5.0  
70  
50  
fe  
C
h
300  
@ I = 1.0 mA  
fe  
3.0  
2.0  
30  
20  
C
1.0  
0.7  
0.5  
10  
7.0  
5.0  
0.3  
0.2  
3.0  
2.0  
0.1  
0.2  
0.5  
1.0 2.0  
5.0  
10  
20  
50  
100  
0.1  
0.2  
0.5 1.0  
2.0  
5.0  
10  
20  
50 100  
I , COLLECTOR CURRENT (mA)  
C
I , COLLECTOR CURRENT (mA)  
C
Figure 15. Input Impedance  
Figure 16. Output Admittance  
http://onsemi.com  
5

BCW30LT1G 替代型号

型号 品牌 替代类型 描述 数据表
BCW30LT1 ONSEMI

完全替代

General Purpose Transistors(PNP Silicon)
SBCW30LT1G ONSEMI

类似代替

PNP Bipolar Transistor

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