Datasheet > BCR185WQ62702C2280

BCR185WQ62702C2280

更新时间： 2024-02-29 10:54:07

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
4页	87K
描述
TRANSISTOR DIGITAL SOT323

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数据手册

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BCR185WQ62702C2280 数据手册

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BCR 185W

PNP Silicon Digital Transistor

• Switching circuit, inverter, interface circuit,

driver circuit

• Built in bias resistor ( R =10kΩ, R =47kΩ)

VSO05561

R₁

R₂

EHA07183

Type

BCR 185W

Marking

WNs

Pin Configuration

Package

SOT-323

1 = B

2 = E

3 = C

Maximum Ratings

Parameter

Symbol

Value

Unit

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Input on Voltage

CEO

CBO

EBO

i(on)

DC collector current

100

250

150

°C

Total power dissipation, T = 124 °C

Junction temperature

tot

Storage temperature

-65 ... 150

stg

Thermal Resistance

Junction ambient

K/W

≤ 240

≤ 105

thJA

thJS

Junction - soldering point

1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm Cu

Oct-19-1999

12 3 4

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