Datasheet > BCR189F-E6433

BCR189F-E6433

更新时间： 2024-01-20 00:08:59

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
6页	162K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, PNP, Silicon

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BCR189F-E6433 数据手册

BCR189...

PNP Silicon Digital Transistor

• Switching circuit, inverter, interface circuit,

driver circuit

• Built in bias resistor (R = 22 kΩ)

• Pb-free (RoHS compliant) package

• Qualified according AEC Q101

BCR189F

R₁

EHA07180

Type

BCR189F

Marking

W2s

Pin Configuration

1=B 2=E 3=C

Package

TSFP-3

Maximum Ratings

Parameter

Symbol

Value

Unit

Collector-emitter voltage

Collector-base voltage

Input forward voltage

Input reverse voltage

Collector current

CEO

CBO

i(fwd)

i(rev)

100

250

Total power dissipation

tot

BCR189F, T ≤ 128°C

150

°C

Junction temperature

Storage temperature

-65 ... 150

stg

Thermal Resistance

Parameter

Junction - soldering point , BCR189F

Symbol

Value

≤ 90

Unit

K/W

thJS

¹Pb-containing package may be available upon special request

²For calculation of R

please refer to Application Note Thermal Resistance

thJA

2007-08-03

12 3 4 5 6

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