Datasheet > BCM847QASZ

BCM847QASZ

更新时间： 2024-11-13 22:04:23

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描述
BCM847QAS/SOT1216/DFN1010B-6

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BCM847QASZ 数据手册

BCM847QAS

45 V, 100 mA NPN/NPN matched double transistors

24 April 2018

Product data sheet

1. General description

NPN/NPN matched double transistors in an ultra small DFN1010B-6 (SOT1216) leadless Surface-

Mounted Device (SMD) plastic package.

PNP/PNP complement: BCM857QAS

2. Features and benefits

•

Reduces component count

•

Reduces pick and place costs

Low package height of 0.37 mm

Current gain matching

Base-emitter voltage matching

Application-optimized pinout

AEC-Q101 qualified

3. Applications

•

Current mirror

Differential amplifier

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per transistor

V_CEO

collector-emitter

voltage

open base

I_C

collector current

100

200

450

I_CM

peak collector current t_p≤ 1 ms; single pulse

h_FE

DC current gain

V_CE= 5 V; I_C= 2 mA; T_amb= 25 °C

200

290

Per device

h_FE1/h_FE2

DC current gain

matching

V_CE= 5 V; I_C= 2 mA; T_amb= 25 °C

0.95

1.05

V_BE1−V_BE2

base-emitter voltage

matching

[1]

[1] The smaller of the two values is subtracted from the larger value.

12 3 4 5 6 7...11

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