是否Rohs认证: | 符合 | 生命周期: | Transferred |
零件包装代码: | TSOP | 包装说明: | SMALL OUTLINE, R-PDSO-G6 |
针数: | 6 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.26 |
Is Samacsys: | N | 最大集电极电流 (IC): | 0.1 A |
集电极-发射极最大电压: | 65 V | 配置: | SEPARATE, 2 ELEMENTS |
最小直流电流增益 (hFE): | 200 | JESD-30 代码: | R-PDSO-G6 |
JESD-609代码: | e3 | 元件数量: | 2 |
端子数量: | 6 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | PNP | 最大功率耗散 (Abs): | 0.38 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | YES | 端子面层: | Tin (Sn) |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | 40 | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 175 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BCM856DS/DG,115 | NXP |
获取价格 |
BCM856BS; BCM856BS/DG - PNP/PNP matched double transistors TSOP 6-Pin | |
BCM856DS/DG,125 | NXP |
获取价格 |
SMALL SIGNAL TRANSISTOR | |
BCM856DS/DG,135 | NXP |
获取价格 |
SMALL SIGNAL TRANSISTOR | |
BCM856DS/DG,165 | NXP |
获取价格 |
SMALL SIGNAL TRANSISTOR | |
BCM856S | INFINEON |
获取价格 |
PNP Silicon AF Transistor Array | |
BCM856S_07 | INFINEON |
获取价格 |
PNP Silicon AF Transistor Array | |
BCM856S-E6327 | INFINEON |
获取价格 |
Transistor | |
BCM856SE6327HTSA1 | INFINEON |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 2-Element, PNP, Silicon, ROHS CO | |
BCM856S-E6433 | INFINEON |
获取价格 |
Transistor | |
BCM856SH6327XTSA1 | INFINEON |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 2-Element, PNP, Silicon, ROHS CO |