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BCM856SH6778 PDF预览

BCM856SH6778

更新时间: 2024-11-13 21:17:59
品牌 Logo 应用领域
英飞凌 - INFINEON 放大器光电二极管晶体管
页数 文件大小 规格书
9页 538K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 2-Element, PNP, Silicon, ROHS COMPLIANT PACKAGE-6

BCM856SH6778 技术参数

是否Rohs认证: 符合生命周期:End Of Life
包装说明:SMALL OUTLINE, R-PDSO-G6Reach Compliance Code:compliant
风险等级:5.65最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:65 V配置:SEPARATE, 2 ELEMENTS
最小直流电流增益 (hFE):200JESD-30 代码:R-PDSO-G6
元件数量:2端子数量:6
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP表面贴装:YES
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):250 MHz
Base Number Matches:1

BCM856SH6778 数据手册

 浏览型号BCM856SH6778的Datasheet PDF文件第2页浏览型号BCM856SH6778的Datasheet PDF文件第3页浏览型号BCM856SH6778的Datasheet PDF文件第4页浏览型号BCM856SH6778的Datasheet PDF文件第5页浏览型号BCM856SH6778的Datasheet PDF文件第6页浏览型号BCM856SH6778的Datasheet PDF文件第7页 
BCM856S  
PNP Silicon AF Transistor Array  
Precision matched transistor pair: I 10%  
For current mirror applications  
C
4
5
3
2
6
1
Low collector-emitter saturation voltage  
Two (galvanic) internal isolated Transistors  
Complementary type: BCM846S  
BC856S: For orientation in reel see  
package information below  
Pb-free (RoHS compliant) package  
Qualified according AEC Q101  
C1  
6
B2  
5
E2  
4
TR2  
TR1  
1
2
3
E1  
B1  
C2  
EHA07175  
Type  
BCM856S  
Marking  
3Ms  
Pin Configuration  
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363  
Package  
Maximum Ratings  
Parameter  
Symbol  
Value  
65  
80  
80  
5
100  
200  
250  
Unit  
V
Collector-emitter voltage  
Collector-emitter voltage  
Collector-base voltage  
Emitter-base voltage  
Collector current  
V
V
V
V
CEO  
CES  
CBO  
EBO  
mA  
mW  
°C  
I
C
Peak collector current, t 10 ms  
Total power dissipation-  
I
p
CM  
P
tot  
T = 115 °C  
S
150  
Junction temperature  
Storage temperature  
T
j
T
-65 ... 150  
stg  
1
2011-10-05  

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